Preparation method of photoelectric detector

Abstract

The invention provides a preparation method of a photoelectric detector. The preparation method comprises the following steps: (1) providing a silicon substrate and forming a Ge substrate layer on the surface of the silicon substrate; (2) growing a SiGe / Ge cycle structure on the Ge substrate layer and covering an uppermost layer by Ge; (3) etching in the SiGe / Ge cycle structure and the Ge substrate layer until at least two grooves are formed in the silicon substrate at an interval; (4) removing SiGe in the SiGe / Ge cycle structure between the grooves by a selective corrosion process to form multiple layers of Ge structures at intervals; (5) adhering metal particles onto the surfaces of the Ge structures by a solution process; (6) making electrodes on the surface of the SiGe / Ge cycle structure. According to the preparation method, local surface plasma resonance is generated by metal particles, the efficient silicon-based photoelectric detector is prepared, and the photoelectric detection efficiency is further improved through introduction of a plurality of surfaces; the preparation method is simple in step and suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor detection device, in particular to a method for preparing a silicon-based Ge photoelectric detector. Background technique [0002] The detection of optical signals is an important part of spectral measurement. Different detectors are used in different occasions and for different purposes. The most important considerations are the detector's application wavelength range, detection sensitivity and response time. Photodetectors are devices that convert light radiation energy into another physical quantity that is easy to measure. pressure detector. [0003] Photodetectors convert optical radiation energy into current or voltage signals for measurement, and are the most commonly used optical signal detectors. Its main features are: high detection sensitivity, fast time response, and can measure the instantaneous change of optical radiation power, but it has obvious optical wavelength selecti...

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Problems solved by technology

[0008] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a photodetector, which is used to solve the problem that the detection efficiency of silicon-based Ge photodetectors is not high in the prior art

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