Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools

A technology of chemical machinery and special tools, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to reduce roughness, improve wafer surface morphology, and improve quality

Active Publication Date: 2014-11-26
广东天域半导体股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions. This cleaning method combines chemical mechanical polishing and cleaning methods, is suitable for wafer surfaces with firm adhesion defects, and connects the po

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  • Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools
  • Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools
  • Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools

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Embodiment Construction

[0029] See Figure 2-4 Shown, a kind of chemical mechanical cleaning method of SiC epitaxial wafer, comprises the following steps:

[0030] First, the SiC epitaxial wafer that needs to be cleaned is placed on a corrosion-resistant pedestal, and the wafer will be rotated through the pedestal. Usually the susceptor can be driven by a motor, and the wafer is held by holding clamps on the susceptor. The rotation speed of the base can be adjusted according to needs, and there is no need to specifically limit the rotation speed. It can usually be maintained at about 1000 rotations per minute, and the rotation speed can be adjusted according to the degree of cleaning.

[0031] Secondly, a corrosion-resistant brush is used as the polishing brush. The polishing brush rotates and moves back and forth along the radial direction of the wafer to perform chemical polishing on the surface of the wafer. During the cleaning process, the polishing liquid will be sprayed on the surface of the w...

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Abstract

The invention relates to a chemical mechanical cleaning method of a SiC epitaxial wafer and special-purpose tools. The cleaning method includes the following steps: firstly the SiC epitaxial wafer is placed on a base so as to be fixed and rotation of the wafer is realized through the base; then a hair brush is adopted as a polishing brush which carries out autorotation and moves back and forth in a radius direction of the wafer and then chemical polishing and cleaning are carried out on the surface of the wafer, wherein a polishing solution is sprayed on the surface of the wafer through the polishing brush; then, the polishing brush is lifted and a cleaning brush is put down and the cleaning brush carries out autorotation and moves back and forth in the radius direction of the wafer so as to clean the surface of the wafer, wherein deionized water is sprayed on the surface of the wafer through the cleaning brush; next, the cleaning brush is lifted and the deionized water is used to flush the surface of the wafer; and at last, hot nitrogen is used to blow and sweep the rotating wafer surface so as to dry the wafer. The chemical mechanical cleaning method is capable of effectively removing pollutant residues on the surface of the wafer and specific decoration is carried out on the surface of the wafer so that effects of improvement of surface roughness and removal of surface stress are achieved.

Description

technical field [0001] The present invention relates to a kind of chemical mechanical cleaning method of SiC epitaxial wafer and the special tool in this method, particularly, a kind of method that relates to efficiently removing the contamination residue firmly adhered on the surface of semiconductor wafer (such as on the surface of SiC epitaxial wafer Firmly adhered 3C-SiC particles), and modify the surface of the wafer to improve surface roughness and remove surface stress. Background technique [0002] The cleanliness of the semiconductor wafer surface is critical to obtain high-performance and high-yield devices. During the manufacturing process of semiconductor devices, impurities and surface defects caused by different processes will cause serious harm to device manufacturing. For example, heavy metal ions, sodium ions, oil, and dust, these impurities affect the purity of the material and the integrity of the crystal structure, which will cause short circuits in the ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02052H01L21/0209H01L21/02096
Inventor 张新河孙国胜李锡光萧黎鑫刘丹谢建良范志颂
Owner 广东天域半导体股份有限公司
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