Chemical mechanical cleaning method of SiC epitaxial wafer and special-purpose tools

Abstract

The invention relates to a chemical mechanical cleaning method of a SiC epitaxial wafer and special-purpose tools. The cleaning method includes the following steps: firstly the SiC epitaxial wafer is placed on a base so as to be fixed and rotation of the wafer is realized through the base; then a hair brush is adopted as a polishing brush which carries out autorotation and moves back and forth in a radius direction of the wafer and then chemical polishing and cleaning are carried out on the surface of the wafer, wherein a polishing solution is sprayed on the surface of the wafer through the polishing brush; then, the polishing brush is lifted and a cleaning brush is put down and the cleaning brush carries out autorotation and moves back and forth in the radius direction of the wafer so as to clean the surface of the wafer, wherein deionized water is sprayed on the surface of the wafer through the cleaning brush; next, the cleaning brush is lifted and the deionized water is used to flush the surface of the wafer; and at last, hot nitrogen is used to blow and sweep the rotating wafer surface so as to dry the wafer. The chemical mechanical cleaning method is capable of effectively removing pollutant residues on the surface of the wafer and specific decoration is carried out on the surface of the wafer so that effects of improvement of surface roughness and removal of surface stress are achieved.

Description

technical field [0001] The present invention relates to a kind of chemical mechanical cleaning method of SiC epitaxial wafer and the special tool in this method, particularly, a kind of method that relates to efficiently removing the contamination residue firmly adhered on the surface of semiconductor wafer (such as on the surface of SiC epitaxial wafer Firmly adhered 3C-SiC particles), and modify the surface of the wafer to improve surface roughness and remove surface stress. Background technique [0002] The cleanliness of the semiconductor wafer surface is critical to obtain high-performance and high-yield devices. During the manufacturing process of semiconductor devices, impurities and surface defects caused by different processes will cause serious harm to device manufacturing. For example, heavy metal ions, sodium ions, oil, and dust, these impurities affect the purity of the material and the integrity of the crystal structure, which will cause short circuits in the ...

AI Technical Summary

Problems solved by technology

[0013] In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions. This cleaning method combines chemical mechanical polishing and cleaning methods, is suitable for wafer surfaces with firm adhesion defects, and connects the polishing brush with a hollow design to the external pipeline. , the polishing liquid is transported to the brush head part of the polishing brush through the pipeline, the wafer surface is polished and cleaned by the brush head, and then the crystal surface is cleaned by the cleaning brush

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