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N-type medium-high-temperature pseudo binary thermoelectric alloy and preparation technology thereof

A preparation process and pseudo-binary technology, which is applied in the field of n-type medium-high temperature pseudo-binary thermoelectric alloy and its preparation technology, can solve the problems of low operating temperature and poor thermoelectric performance, and achieve the effect of low cost and simple process

Inactive Publication Date: 2014-11-26
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the above-mentioned deficiencies, the present invention aims to provide an n-type medium-high temperature pseudo-binary thermoelectric alloy with a thermoelectric figure of merit of 1.34 at 923K and its preparation process, so as to solve the poor thermoelectric properties of existing similar materials And the technical problem of lower temperature

Method used

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  • N-type medium-high-temperature pseudo binary thermoelectric alloy and preparation technology thereof
  • N-type medium-high-temperature pseudo binary thermoelectric alloy and preparation technology thereof

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Experimental program
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Effect test

Embodiment 1

[0011] According to the chemical formula In 1.99 Zn 0.01 Se 3 The three elements of In, Zn and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. The melting synthesis temperature is 1150°C, and the melting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting to synthesize, slowly cool to room temperature in the furnace. In after smelting 1.99 Zn 0.01 Se 3 The ingot was pulverized and ball milled, and the ball milling time was controlled at 5 hours. The powder after ball milling was formed by spark plasma sintering (SPS). The sintering temperature was 700°C, the sintering pressure was 60MPa, and the sintering time was 12 minutes. Prepared to get In 1.99 Zn 0.01 Se 3 thermoelectric semiconductors.

Embodiment 2

[0013] According to the chemical formula In 2 S 0.4 Se 2.6 The three elements of In, S and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes respectively. The smelting synthesis temperature is 1050°C, and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting to synthesize, slowly cool to room temperature in the furnace. In after smelting 2 S 0.4 Se 2.6 The ingot was pulverized and ball milled, and the ball milling time was controlled at 5 hours. The powder after ball milling was formed by spark plasma sintering (SPS). The sintering temperature was 700°C, the sintering pressure was 60MPa, and the sintering time was 12 minutes. Prepared to get In 2 S 0.4 Se 2.6 thermoelectric semiconductors.

Embodiment 3

[0015] First according to the chemical formula In 1.99 Zn 0.01 Se 3 The three elements of In, Zn and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes for melting and synthesis. The synthesis temperature was 1150°C. Then according to the chemical formula In 2 S 0.4 Se 2.6 The three elements of In, S and Se with a purity greater than 99.999wt.% were weighed and placed in vacuum quartz tubes for melting and synthesis at a synthesis temperature of 1050°C. The smelting synthesis time of the above two materials is 24 hours. Then according to (In 1.99 Zn 0.01 Se 3 ) 0.8 (In 2 S 0.4 Se 2.6 ) 0.2 Stoichiometric ratio Weigh the corresponding amount of In 1.99 Zn 0.01 Se 3 and In 2 S 0.4 Se 2.6, placed in a vacuum quartz tube. The melting synthesis temperature is 1100°C, and the melting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting to synthesize, slowly cool...

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Abstract

The invention relates to an n-type medium-high-temperature pseudo binary thermoelectric alloy and a preparation technology thereof, and the chemical formula of the pseudo binary thermoelectric alloy is (In1.99Zn0.01Se3) 0.8 (In2S0.4Se2.6) 0.2 and the preparation technology is as follows: firstly two components In1.99Zn0.01Se3 and In2S0.4Se2.6 are synthesized through smelting in a vacuum quartz tube, wherein the synthesizing temperature of the former is 1100-1200 DEG C and the synthesizing temperature of the latter is 1000-1100 DEG C, and the synthesizing times are 24 hours respectively; and according to the chemical formula, the pseudo binary thermoelectric alloy is matched and then synthesized through vacuum smelting, wherein the synthesizing temperature is 1050-1150 DEG C and the synthesizing time is 24 hours and then grinding and ball milling are carried out and a powder which undergoes the ball milling is prepared through spark plasma sintering, wherein the sintering temperature is 650-750 DEG C, the sintering pressure is 50-70 MPa and the thermal insulation time is 10-15 minutes. The advantages of the pseudo binary thermoelectric alloy are that the pseudo binary thermoelectric alloy is pollution free and noise free, applicable to manufacturing of high-temperature power generation components and has the advantages of reliable operation, long service life and simple preparation technology.

Description

technical field [0001] The invention relates to the field of new materials, and is a material for key components of medium-high temperature power generation suitable for direct conversion of thermal energy and electric energy. It is an n-type medium-high temperature pseudo-binary thermoelectric alloy and a preparation process thereof. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilization power supply, and small po...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34C22C1/04C22C30/06
Inventor 崔教林王莉
Owner NINGBO UNIVERSITY OF TECHNOLOGY