Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Control method for immersed photoetching immersion head pose regulating mechanism

A control method and a technology of an adjustment mechanism, which are applied in the direction of use feedback control, microlithography exposure equipment, photolithography exposure device, etc., can solve problems affecting the immersion head posture, immersion head posture does not meet the work requirements, immersion head Problems such as not meeting the work requirements to achieve the effect of ensuring portability, scalability, stability and reliability

Inactive Publication Date: 2014-12-10
ZHEJIANG UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. After the immersion head is installed on the main body of the immersion lithography machine through the pose adjustment subsystem, there will be a certain error in the vertical installation position of the immersion head, which will cause the pose of the immersion head relative to the upper surface of the silicon wafer to be unsatisfactory. Work requirements
[0005] 2. During the exposure process, the immersion head moves relative to the workpiece table. When the direction of movement changes, it will affect the pose of the immersion head relative to the upper surface of the silicon wafer.
[0007] 4. After the pose adjustment mechanism is reset, when it runs again, the pose of the immersion head relative to the upper surface of the silicon wafer may not meet the working requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Control method for immersed photoetching immersion head pose regulating mechanism
  • Control method for immersed photoetching immersion head pose regulating mechanism
  • Control method for immersed photoetching immersion head pose regulating mechanism

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] like figure 1 As shown, it is a three-dimensional model diagram of the immersion head posture adjustment mechanism of the immersion lithography machine, figure 2 Schematic diagram of the structure of the organization.

[0029] Three voice coil linear motors 4, 7, 12 are fixed on the same distribution circle on the side of fixed platform 1, the angle between motor 4 and motor 7 is 120°, the angle between motor 7 and motor 12 is 160°, the three motors It is the power source of the parallel mechanism; three grating rulers 5, 6, and 8 are respectively fixedly installed within the stroke range above the three linear motors, and are used for real-time feedback of motor position information; three laser displacement sensors 3, 9, and 10 are fixedly installed On the lower surface of the motion platform 2, distributed on the same distribution circle, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a control method for an immersed photoetching immersion head pose regulating mechanism. The immersed photoetching immersion head pose regulating mechanism comprises a control system software and hardware structure. The software part comprises a pose measuring module, a pose regulating module, a user interaction module and a parent system communication module; the hardware part comprises a three degree of freedom parallel mechanism, a laser displacement sensor, a voice coil linear motor and a controller. The control system is used for accurate pose regulation for an immersion head mounted on a motion platform relative to a silicon wafer. Meanwhile, online debugging can be realized through the user interaction module; through the parent system communication module, the functions of the system such as working status switching, system parameter setting and data guiding are realized; through an anti-collision module and an emergency stop design, safe and reliable operation of the system are guaranteed. The control method is characterized in that the control software adopts modularized and multi-thread programming, and the stability, expandability and transportability are guaranteed; the mechanical structure is realized through the three degree of freedom parallel mechanism, and the mechanical rigidity and positional accuracy of the system are guaranteed.

Description

technical field [0001] The invention relates to a mechanism control method, in particular to a software control method for a position and posture adjustment mechanism of an immersion photolithography immersion head machine. Background technique [0002] The lithography machine is one of the core equipment for manufacturing VLSI. The modern lithography machine is mainly based on optical lithography. It uses the optical system to accurately project and expose the pattern on the mask to the silicon coated with photoresist. Chip. It includes a laser light source, an optical system, a projection mask composed of chip patterns, an alignment system and a silicon wafer coated with photosensitive photoresist. [0003] The silicon wafer leveling of the immersion head of the immersion lithography (Immersion Lithography) equipment is realized through the posture adjustment mechanism. The vertical position of the immersion head relative to the silicon wafer will affect the flow field o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05D3/12G03F7/20
Inventor 傅新陈文昱马同余乐贤
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products