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Nano-structure-controllable diluted magnetic semiconductor material and preparation method and device thereof

A technology of dilute magnetic semiconductors and nanostructures, applied in nanostructure applications, liquid injection devices, nanotechnology, etc., can solve problems such as high preparation costs, complex equipment, and low deposition efficiency, and achieve concentrated droplet size distribution and solve Effect of heat conduction damage and improvement of uniformity

Active Publication Date: 2014-12-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above four methods all need to be carried out in a vacuum environment, not only the equipment is complicated, but also the preparation cost is high
Although ultrasonic atomization pyrolytic spraying (USP) technology can overcome the above shortcomings and deposit nanostructured materials quickly and in large areas at low temperatures, traditional USP equipment has problems such as low deposition efficiency, large amount of precursors, doping solution It is easy to contaminate with the source solution, and the prepared film has many disadvantages such as poor purity and uniformity

Method used

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  • Nano-structure-controllable diluted magnetic semiconductor material and preparation method and device thereof
  • Nano-structure-controllable diluted magnetic semiconductor material and preparation method and device thereof
  • Nano-structure-controllable diluted magnetic semiconductor material and preparation method and device thereof

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Effect test

Embodiment 1

[0060] Dual-source ultrasonic atomization pyrolysis spraying improvement device of the present invention (see schematic diagram figure 1 ), comprising a carrier gas pump 1, an atomization chamber, a reaction chamber 4 and an electric control system 5 connected in sequence, the carrier gas pump, the atomization chamber and the reaction chamber are connected by a pipeline, and the reaction chamber and the electric control system are connected by a circuit; the atomization chamber is composed of Composed of two parallel atomization tanks 2, the atomization tanks 2 are respectively connected with liquid cups 3, the bottom of the atomization tank 2 is provided with a cooling water circulation device, the inner bottom of the atomization tank 2 is provided with an isolation film, and the liquid container A two-way variable-speed peristaltic pump is installed between the cup 3 and the atomizing tank 2, and the solution in the liquid-holding cup 3 is transported to the atomizing tank 2 ...

Embodiment 2

[0071] A common glass slide is used as the substrate, zinc acetate is selected as the source solution, and copper acetate is selected as the doping solution, and a dilute magnetic semiconductor with room temperature ferromagnetism and controllable nanostructure is prepared by using the improved dual-source ultrasonic atomization pyrolysis spraying device of the present invention. Materials, specific steps and parameters are as follows:

[0072] (1) First, according to the target product chemical formula Zn 0.98 Cu 0.02 O will 21.51g of Zn(CH 3 COO) 2 2H 2 O and 0.399g of Cu(CH 3 COO) 2 ·H 2 O powder is dissolved in the beaker that fills 500mL distilled water respectively, is configured into the zinc acetate solution that concentration is 0.2mol / L and the copper acetate solution of same volume with it;

[0073] (2) To prevent Zn(OH) 2 and Cu(OH) 2 For the formation of precipitates, add 2 to 3 drops of acetic acid to the prepared copper acetate and zinc acetate solution...

Embodiment 3

[0081] A common glass slide is used as the substrate, zinc acetate is selected as the source solution, and copper acetate is selected as the doping solution, and a dilute magnetic semiconductor with room temperature ferromagnetism and controllable nanostructure is prepared by using the improved dual-source ultrasonic atomization pyrolysis spraying device of the present invention. Materials, specific steps and parameters are as follows:

[0082] (1) First, according to the target product chemical formula Zn 0.98 Cu 0.02 O will 21.51g of Zn(CH 3 COO) 2 2H 2 O and 0.399g of Cu(CH 3 COO) 2 ·H 2 O powder is dissolved in the beaker that fills 500mL distilled water respectively, is configured into the zinc acetate solution that concentration is 0.2mol / L and the copper acetate solution of same volume with it;

[0083] (2) To prevent Zn(OH) 2 and Cu(OH) 2 For the formation of precipitates, add 2 to 3 drops of acetic acid to the prepared copper acetate and zinc acetate solution...

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PUM

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Abstract

The invention belongs to the technical field of semiconductor nano-material preparation, and discloses a nano-structure-controllable diluted magnetic semiconductor material having room-temperature ferromagnetism and a preparation method and device of the diluted magnetic semiconductor material. The material is prepared in the method comprising the steps that a zinc acetate solution and a copper acetate solution having the same volume are placed in two solution containing cups of a double-source ultrasonic atomization pyrolysis spraying instrument respectively, double-source ultrasonic atomization pyrolysis spraying is carried out, and the nano-structure-controllable diluted magnetic semiconductor material deposited on a substrate is obtained. Precursors are atomized through ultrasonic waves, and therefore smaller and more uniform mist can be obtained; double-source atomization is adopted, so that cross contamination between the solutions is avoided during mixing, meanwhile, component structures are easy to control, and preparation of a gradient film or a multilayer film structure is facilitated; the device is improved, so that purely diluted magnetic semiconductor materials with different nano-structures and various good properties are prepared, Ms can reach 3.8*10<-4>emu / cm<-2>, Hc can reach 0.1 KOe, and the materials have the characteristic of soft magnetism.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, in particular to a dilute magnetic semiconductor material with room temperature ferromagnetism and controllable nanostructure, and a preparation method and device thereof. Background technique [0002] In today's information-dominated era, dilute magnetic semiconductors (DMSs) devices are destined to be more promising than ordinary semiconductor devices due to their unique properties such as low energy consumption, fast transmission speed, small size, and non-volatility. However, the realization of DMSs devices with different functions requires DMSs materials with different nanostructures as supports. Due to its rich nanostructure and excellent comprehensive performance, ZnO material has attracted more and more attention from researchers from various countries in recent years. Therefore, people choose ZnO material as doping matrix to prepare DMSs materials with diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01F41/30B05B17/06B82Y30/00B82Y40/00
Inventor 曾德长马海力刘仲武余红雅
Owner SOUTH CHINA UNIV OF TECH
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