Organic-inorganic composite resistive random access memory and preparation method for same

Abstract

The invention relates to the technical field of electronic devices, in particular to an organic-inorganic composite resistive random access memory and a preparation method for the same. The organic-inorganic composite resistive random access memory comprises a substrate, as well as a bottom electrode deposited on the substrate, an organic-inorganic composite dielectric layer inlaid with lithium ion compound particles, and a top electrode which are sequentially arranged on the substrate. The organic-inorganic composite resistive random access memory disclosed by the invention has the following advantages that: metal lithium ions forming resistive random fine wires are provided by virtue of the lithium ion compound particles inlaid in an organic dielectric; the metal lithium ions have the characteristics of high redox reaction activity, small atomic radius and the like, and are capable of reducing a fine wire formation energy and increasing a resistive random access speed; the electric field formed by nano-particles is concentrated, thus reducing the randomness formed by the resistive random fine wires, and improving the uniformity and reliability of the memory device; the device has the characteristic of being flexibly printable.

Description

technical field [0001] The invention relates to the technical field of electronic devices, and more specifically, relates to an organic-inorganic composite resistive variable memory and a preparation method thereof. Background technique [0002] With the development of information technology, the requirements for integration are getting higher and higher. The traditional flash memory (flash memory) is getting closer and closer to its physical limit due to the reliability problems caused by the shrinking of the device size. Looking for another Non-volatile memory with high integration, low power consumption and low cost has become the focus of attention in academia and industry. Among them, resistive RAM (RRAM), as a new type of non-volatile memory, has attracted widespread attention. It has a simple structure, a metal-dielectric layer-metal (M-I-M) structure, and has the advantages of low reading and writing voltage, low power consumption, high storage density and high rel...

AI Technical Summary

Problems solved by technology

Obviously, for such a structure, the electric field distribution in the dielectric layer is generally uniform, so the appearance of filaments has a certain randomness, which is not conducive to the repeatability and stability of the device.

In addition, there are no metal ions in organic materials, the formation of conductive filaments generally depends on the diffusion of metal ions in electrodes, the switching speed is slow, and the device stability is poor

Images