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Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode

A light-emitting diode, high-efficiency technology, applied in the field of providing tools, can solve the problems of difficult p-GaN layer and transparent electrode layer patterning procedures, etc., to reduce the possibility of internal total reflection, improve luminous performance, increase Yield effect

Inactive Publication Date: 2014-12-17
HUNET PLUS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to actually commercialize the patterning process of p-GaN layer and transparent electrode layer in consideration of the manufacturing process (such as packaging process or the like) and yield of forming p-type electrode and light-emitting diode after patterning

Method used

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  • Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode
  • Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode
  • Method for fabricating nanopatterned substrate for high-efficiency nitride-based light-emitting diode

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Embodiment Construction

[0026] The specific implementation aspects of the present invention will be described below with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention. However, the present invention is not limited to this particular embodiment, but can be implemented in many different ways. Like elements are denoted by like numerals in this description.

[0027] figure 1 A schematic diagram showing a method for manufacturing a nitride light-emitting diode according to a specific implementation aspect of the present invention; figure 2 a conceptual diagram showing examples of various patterns that may be used in embodiments of the invention; and image 3 A conceptual diagram of a light-emitting diode manufactured according to a specific embodiment of the present invention. The method for manufacturing a nitride light-emitting diode according to a specific implementation aspect of the present invention includes a first step of fo...

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Abstract

A method for manufacturing a nitride-based light-emitting diode is disclosed. According to the method, a substrate having a nanopattern comprising a bottom portion and a convex portion is manufactured, and a buffer layer formed on the substrate is manufactured, wherein the bottom diameter of the convex portion is 0.1 to 3 times as big as the light-emitting wavelength of a light-emitting diode, and the buffer layer consists of a GaN layer. A significant increase in the improvement level of light extraction and the economical formation of a nanopattern can be achieved by the method.

Description

technical field [0001] The present invention is provided to economically fabricate nanometer to micrometer size patterns on a substrate formed of sapphire single crystal, quartz, silicon or the like by nanoprinting or nanoimprint process, And forming gallium nitride or the like on the pattern to provide a nitride light emitting diode with reduced crystal defects, thereby significantly improving the performance of the light emitting diode. Background technique [0002] Light-emitting diodes have attracted attention as a light source for future lighting, and are currently widely used as light-emitting devices due to their long life, low energy consumption, and environmental friendliness compared with conventional fluorescent lamps, incandescent lamps, and the like. Light sources in many fields. Specifically, since nitride light-emitting diodes have a large energy gap, they have the advantage of being able to emit light from green to blue regions and near-ultraviolet regions, ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/22
CPCH01L21/02376H01L21/0243H01L21/02458H01L21/0254H01L21/02658H01L33/007H01L33/22H01L2933/0008H01L2933/0066G03F7/0002H01L21/0237H01L33/20H01L33/0066H01L33/0075H01L33/12
Inventor 车爀鎭李宪崔殷书
Owner HUNET PLUS