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Preparation method for high-purity tellurium

A technology for high-purity tellurium and metal tellurium, which is applied in the field of 5N high-purity tellurium preparation, can solve the problems of complex preparation method, high cost, and cannot meet the requirements of industrial continuous production, and achieves the effect of simple process and high degree of equipment automation.

Inactive Publication Date: 2014-12-24
ZHUZHOU KENENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are chemical methods, electrolysis methods and vacuum distillation methods for preparing high-purity tellurium, but these methods in the prior art are difficult to obtain high-purity metal tellurium with a purity greater than 5N. Even if 5N high-purity metal tellurium can be obtained, the preparation method is complicated. The cost is high and cannot meet the requirements of industrial continuous production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The sodium hydroxide solution containing tellurium dioxide is used as the electrolyte, the concentration of sodium hydroxide in the electrolyte is 100g / L, the concentration of tellurium dioxide is 250g / L based on the mass of tellurium, the stainless steel plate is used as the cathode, and the iron plate is used as the anode. At a temperature of 25°C, 50A / m 2 Electrolysis is carried out at a current density of 4N, and metal tellurium with a purity of not less than 4N is obtained on the cathode; the obtained 4N metal tellurium is kept at a temperature of 420°C and a vacuum of not higher than 5Pa, and hydrogen with a purity of more than 6N is used as a protective atmosphere. Carry out Czochralski method purification to obtain 7N high-purity tellurium. The specific impurity content in the product is as follows: unit (ppm) Cu 0.008, Pb 0.006, Al 0.005, Bi 0.005, Fe 0.007, Na 0.008, Si 0.005, S 0.005, Se 0.005, As 0.001.

Embodiment 2

[0018] The sodium hydroxide solution containing tellurium dioxide is used as the electrolyte, the concentration of sodium hydroxide in the electrolyte is 100g / L, the concentration of tellurium dioxide is 250g / L based on the mass of tellurium, the stainless steel plate is used as the cathode, and the iron plate is used as the anode. At a temperature of 30°C, 60A / m 2 Electrolysis is carried out at a current density of 4N, and metal tellurium with a purity of not less than 4N is obtained on the cathode; the obtained 4N metal tellurium is kept at a temperature of 450°C and a vacuum of not higher than 5Pa, and hydrogen with a purity of more than 6N is used as a protective atmosphere. Purify by Czochralski method to obtain 6N high-purity tellurium. The specific impurity content in the product is as follows: unit (ppm) Cu 0.08, Pb 0.07, Al 0.05, Bi 0.06, Fe 0.07, Na 0.08, Si 0.06, S 0.05, Se 0.05, As 0.02, Mg 0.006.

Embodiment 3

[0020] The sodium hydroxide solution containing tellurium dioxide is used as the electrolyte, the concentration of sodium hydroxide in the electrolyte is 90g / L, the concentration of tellurium dioxide is 200g / L based on the mass of tellurium, the stainless steel plate is used as the cathode, and the iron plate is used as the anode. At a temperature of 40°C, 40A / m 2 Electrolysis is carried out at a current density of 4N, and metal tellurium with a purity of not less than 4N is obtained on the cathode; the obtained 4N metal tellurium is kept at a temperature of 400°C and a vacuum of not higher than 10Pa, and hydrogen with a purity of more than 5N is used as a protective atmosphere. Purify by Czochralski method to obtain 5N high-purity tellurium. The specific impurity content in the product is as follows: unit (ppm) Cu 0.7, Pb 0.5, Al 0.3, Bi 0.2, Fe 0.3, Na 0.8, Si 0.8, S0.1, Se 0.1, As 0.04, Mg 0.05.

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Abstract

The invention discloses a preparation method for high-purity tellurium. According to the preparation method, a sodium hydroxide solution containing tellurium dioxide is taken as an electrolyte solution, a stainless steel plate is taken as a cathode, an iron plate is taken as an anode for electrolysis, and metal tellurium with the purity not lower than 4N is obtained on the cathode; the 4N metal tellurium is purified with a Czochralski method under the condition of certain temperature and vacuum so as to obtain the high-purity tellurium with the purity of 5N-7N. The preparation method has simple process, the degree of automation of equipment is high, and continuous large-scale industrial production can be performed.

Description

technical field [0001] The invention relates to a method for preparing high-purity tellurium, which belongs to the technical field of 5N high-purity tellurium preparation. Background technique [0002] Tellurium is one of the rare metals, and 80% of its consumption is used in the metallurgical industry: adding a small amount of tellurium to steel and copper alloys can improve their cutting performance and increase hardness; tellurium is used as a carbide stabilizer in white cast iron Additives can make the surface strong and wear-resistant; lead containing a small amount of tellurium can improve the corrosion resistance, wear resistance and strength of the material, and can be used as a sheath for submarine cables; adding tellurium to lead can increase the hardness of lead and can be used to make batteries Plates and printing type. [0003] Tellurium can be used as an additive for petroleum cracking catalysts and as a catalyst for producing ethylene glycol. Tellurium oxide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/00C30B15/00C30B29/02
Inventor 赵科湘
Owner ZHUZHOU KENENG NEW MATERIAL CO LTD