Metal pad forming method and semiconductor structure

A technology of metal pads and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as poor reliability test results, achieve easy filling, improve performance, and discreteness small effect

Active Publication Date: 2014-12-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for forming a metal pad and

Method used

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  • Metal pad forming method and semiconductor structure
  • Metal pad forming method and semiconductor structure
  • Metal pad forming method and semiconductor structure

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Embodiment Construction

[0033] It has been mentioned in the background art that the potential difference between the two ends of the metal pads in a wafer has a certain difference. At present, it can only be considered that the electrical properties of different regions are different due to process problems. The specific reason is still unclear. After a lot of experiments, the inventor found that after adding titanium (Ti) and titanium nitride (TiN) between tantalum nitride (TaN) as an isolation layer and metal pad aluminum, the measured metal pad of the entire wafer The difference of the potential difference is greatly reduced, which in turn improves the detection pass rate.

[0034] The method for forming a metal pad and the semiconductor structure provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and...

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Abstract

The invention discloses a metal pad forming method and a semiconductor structure. The method comprises the step that a first isolation layer TaN, a second isolation layer Ti and a third isolation layer TiN are formed on a substrate, wherein metal interconnection lines are covered with the first isolation layer TaN, the second isolation layer Ti and the third isolation layer TiN. The potential of one end and the potential of the other end of a metal pad of a whole wafer tend to be consistent and are even very small in difference, the degrees of dispersion is low when reliability is tested, and the yield can be improved easily. Moreover, because the isolation layers are added, gap fill becomes easier when the metal pad is formed, and the performance of devices can be improved easily.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a metal pad and a semiconductor structure. Background technique [0002] The back-end process (BEOL) of integrated circuit manufacturing is mainly to form leads, which is usually done by forming metal pads. Considering that metal Cu is unstable, easy to oxidize and rust, and the requirements for resistance are not harsh, most Metallic aluminum is used to realize the fabrication of metal pads. [0003] In current metal pads, it usually has such figure 1 Structure shown: [0004] Substrate 1, the substrate 1 includes metal interconnection lines 2, a passivation layer 3 located on the substrate 1, the passivation layer 3 is formed with through holes 31, and the through holes 31 are formed with The barrier layer 4 , and the metal aluminum 5 is located on the barrier layer 4 . Considering that the metal interconnection line 2 is usually copper, in or...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L23/485
CPCH01L24/03H01L24/06H01L2224/02123H01L2224/0215H01L2224/03H01L2224/06
Inventor 郭晓清徐俊龚春雷吕乐周真
Owner SEMICON MFG INT (SHANGHAI) CORP
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