Supercharge Your Innovation With Domain-Expert AI Agents!

A kind of diffusion junction method of crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as poor uniformity, and achieve the effects of low cost, good uniformity and remarkable effect

Inactive Publication Date: 2016-08-17
白茹
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The average non-uniformity of the sheet resistance after the diffusion that it finally obtains is 3.6%, and the uniformity between sheets is relatively poor, can refer to paragraph [0036] of its description

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:

[0025] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 750 degrees; the oxygen flow rate is 2000 sccm, and the time is 15min;

[0026] (2) The temperature is raised to 820°C, and the phosphorus oxychloride diffusion source is used for diffusion (the temperature of the phosphorus source is 30°C). The flow rate is 30,000 sccm, and the nitrogen flow rate is 20,000 sccm at the low supply point; the diffusion time is 15 minutes;

[0027] (3) Cool down to 780°C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen to carry out propulsion treatment;

[0028] The flow rates of the nitrogen and oxygen are 15000 sccm and 1000 sccm respectively; keep for 15 minutes;

[0029] (4) Cool down and leave the boat to complete the d...

Embodiment 2

[0044] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:

[0045] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 800 degrees; the oxygen flow rate is 2000 sccm, and the time is 10 min;

[0046] (2) The temperature is raised to 820°C, and the phosphorus oxychloride diffusion source is used for diffusion (the temperature of the phosphorus source is 30°C). The flow rate is 35000 sccm, the nitrogen flow rate is 15000 sccm at the low gas supply point; the diffusion time is 20 minutes;

[0047] (3) Cool down to 790 °C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen for propulsion;

[0048] The flow rates of the nitrogen and oxygen are 20000 sccm and 1500 sccm respectively; keep for 15 minutes;

[0049] (4) Cool down and leave the boat to complete the diffusion process. ...

Embodiment 3

[0055] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:

[0056] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 850 degrees; the oxygen flow rate is 1500 sccm, and the time is 6 min;

[0057] (2) Cool down to 820°C, diffuse through phosphorus oxychloride diffusion source (the temperature of phosphorus source is 30°C), and use pulsed gas supply to carry the source nitrogen, and the time of each pulse is 25 seconds. The flow rate is 40,000 sccm, and the nitrogen flow rate is 20,000 sccm at the low supply point; the diffusion time is 25 minutes;

[0058] (3) Cool down to 800 °C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen to carry out propulsion treatment;

[0059]The flow rates of the nitrogen and oxygen are 25000 sccm and 2000 sccm respectively; keep for 15 minut...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a diffusion junction preparation method for crystalline silicon solar cells. The method includes the steps: (1) putting to-be-processed silicon chips into a diffusion furnace for oxidation treatment; (2) adjusting the temperature to 820-830 DEG C, feeding a source for diffusion and supplying source carried nitrogen in a pulsing mode; (3) cooling to 780-800 DEG C, stopping pulsing gas supply, uniformly feeding nitrogen and oxygen for propelling treatment; (4) cooling and discharging to complete diffusion. The diffusion junction preparation method for the crystalline silicon solar cells has the advantages that uniformity of square resistance after diffusion is improved; experimental results show that silicon chips made according to the method are pretty good in uniformity, the nonuniformity degree is 1.06-1.85%, in-chip and inter-chip uniformity are excellent, and remarkable effectiveness is achieved.

Description

technical field [0001] The invention relates to a diffusion junction method for crystalline silicon solar cells, belonging to the technical field of solar cells. Background technique [0002] With the gradual exhaustion of conventional energy and the increasing demand for energy, mankind is facing an increasingly serious energy crisis, and the development of solar cells is one of the ways to solve the above problems. At present, crystalline silicon solar cells, as the main photovoltaic material, account for 80-90% of the market share. In the prior art, the manufacturing process of crystalline silicon solar cells is as follows: surface cleaning and texturing, diffusion junction, cleaning and etching to remove edges, anti-reflection coating, screen printing, sintering to form ohmic contact, and testing. The above-mentioned commercialized crystalline silicon cell manufacturing technology is relatively simple and low-cost, suitable for industrialized and automated production, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/228
CPCH01L21/2225H01L31/1804Y02E10/547Y02P70/50
Inventor 白茹
Owner 白茹
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More