A kind of diffusion junction method of crystalline silicon solar cell
A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as poor uniformity, and achieve the effects of low cost, good uniformity and remarkable effect
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Embodiment 1
[0024] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:
[0025] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 750 degrees; the oxygen flow rate is 2000 sccm, and the time is 15min;
[0026] (2) The temperature is raised to 820°C, and the phosphorus oxychloride diffusion source is used for diffusion (the temperature of the phosphorus source is 30°C). The flow rate is 30,000 sccm, and the nitrogen flow rate is 20,000 sccm at the low supply point; the diffusion time is 15 minutes;
[0027] (3) Cool down to 780°C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen to carry out propulsion treatment;
[0028] The flow rates of the nitrogen and oxygen are 15000 sccm and 1000 sccm respectively; keep for 15 minutes;
[0029] (4) Cool down and leave the boat to complete the d...
Embodiment 2
[0044] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:
[0045] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 800 degrees; the oxygen flow rate is 2000 sccm, and the time is 10 min;
[0046] (2) The temperature is raised to 820°C, and the phosphorus oxychloride diffusion source is used for diffusion (the temperature of the phosphorus source is 30°C). The flow rate is 35000 sccm, the nitrogen flow rate is 15000 sccm at the low gas supply point; the diffusion time is 20 minutes;
[0047] (3) Cool down to 790 °C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen for propulsion;
[0048] The flow rates of the nitrogen and oxygen are 20000 sccm and 1500 sccm respectively; keep for 15 minutes;
[0049] (4) Cool down and leave the boat to complete the diffusion process. ...
Embodiment 3
[0055] A method for forming a junction by diffusion of a crystalline silicon solar cell, comprising the following steps:
[0056] (1) Put a group of single crystal P-type silicon wafers (400 pieces) after texturing and cleaning into a diffusion furnace, and carry out oxidation treatment at 850 degrees; the oxygen flow rate is 1500 sccm, and the time is 6 min;
[0057] (2) Cool down to 820°C, diffuse through phosphorus oxychloride diffusion source (the temperature of phosphorus source is 30°C), and use pulsed gas supply to carry the source nitrogen, and the time of each pulse is 25 seconds. The flow rate is 40,000 sccm, and the nitrogen flow rate is 20,000 sccm at the low supply point; the diffusion time is 25 minutes;
[0058] (3) Cool down to 800 °C, stop the pulse gas supply, and use a uniform flow to introduce nitrogen and oxygen to carry out propulsion treatment;
[0059]The flow rates of the nitrogen and oxygen are 25000 sccm and 2000 sccm respectively; keep for 15 minut...
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