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Method for growing GaN-based LED epitaxial wafer

An LED epitaxial wafer, GaN-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of large stress on the substrate and epitaxial layer, warping of epitaxial wafers, cracks, etc., and achieve uniformity of emission wavelength. Increase, reduce the standard deviation of wavelength, improve the effect of thermal expansion coefficient

Inactive Publication Date: 2014-12-24
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Second, the large thermal expansion coefficient difference between the sapphire substrate and GaN leads to a large thermal mismatch
The thermal expansion coefficient of sapphire is 7.5×10 -6 K -1 , while the thermal expansion coefficient of GaN is 5.59×10 -6 K -1 , the difference between the two is very large, resulting in a large stress between the substrate and the epitaxial layer during the cooling process after high temperature growth, resulting in warping and cracking of the epitaxial wafer.
As a result, the uniformity of the luminous wavelength of the epitaxial wafer is not high, the efficiency of the quantum well is low, and the luminous brightness is scattered.

Method used

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  • Method for growing GaN-based LED epitaxial wafer

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Embodiment 1

[0022] A method for growing gallium nitride-based LED epitaxial wafers is provided, comprising the following steps:

[0023] Put the sapphire substrate with (0001) crystal orientation into the MOCVD reaction chamber, and then 2 The temperature in the environment is raised to 1180° C., stabilized for 10 minutes, and the substrate is purified at high temperature. Cool down to 550°C and grow 30nm thick low temperature Al at 600mbar 0.01 Ga 0.99 N buffer layer. Raise the temperature to 1150°C to grow a 2.5um thick non-doped GaN layer. A 3um thick n-type GaN layer was grown at 1150°C. in N 2 12 periods of multi-quantum well layers are grown in the environment, GaN barrier layer: thickness is 13nm, growth temperature is 850°C; InGaN well layer: thickness is 2nm, growth temperature is 760°C. Raise the temperature to 1000°C to grow p-Al with a thickness of 60nm 0.08 Ga 0.92 N layers. A 160 nm thick p-type GaN layer was grown at 980°C. A 25nm thick highly doped p-type GaN ele...

Embodiment 2

[0026] A method for growing gallium nitride-based LED epitaxial wafers is provided, comprising the following steps:

[0027] Put the sapphire substrate with (0001) crystal orientation into the reaction chamber, and then 2 The temperature in the environment is raised to 1180° C., stabilized for 10 minutes, and the substrate is purified at high temperature. Cool down to 550°C and grow 10nm thick low temperature Al at 600mbar 0.02 Ga 0.98 N buffer layer. A 20 nm thick low temperature GaN buffer layer was grown at 550°C. Raise the temperature to 1150°C to grow a 2.5um thick non-doped GaN layer. A 3um thick n-type GaN layer was grown at 1150°C. in N 2 12 periods of multi-quantum well layers are grown in the environment, GaN barrier layer: thickness is 13nm, growth temperature is 850°C; InGaN well layer: thickness is 2nm, growth temperature is 760°C. Raise the temperature to 1000°C to grow p-Al with a thickness of 60nm 0.08 Ga 0.92 N layers. A 160 nm thick p-type GaN layer...

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Abstract

The invention discloses a method for growing a GaN-based LED epitaxial wafer. The method comprises the steps that a GaN buffering layer doped with Al is grown on a sapphire substrate, wherein the molar ratio of the Al component is smaller than three percent; an InGaAlN multi-layer structure is grown on the GaN buffering layer doped with Al, wherein the InGaAlN multi-layer structure comprises an N-type GaN layer, a P-type GaN layer and a multiple quantum well luminous layer located between the N-type GaN layer and the P-type GaN layer. According to the method for growing the GaN-based LED epitaxial wafer, the GaN buffering layer doped with Al is inserted between the substrate and an epitaxial layer, the coefficient of thermal expansion of the GaN buffering layer can be improved, stress brought to the GaN epitaxial layer by lattice mismatches and thermal mismatches between the sapphire substrate and the GaN epitaxial layer is remitted, the epitaxial layer can grow smoother, the evenness of wavelength of emitted light, the quantum well efficiency, the concentration ratio of luminance of the emitted light and the like of the LED epitaxial wafer are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a method for growing an LED epitaxial wafer, in particular to a method for growing a GaN-based LED epitaxial wafer containing a GaN buffer layer. Background technique [0002] GaN-based materials, including InGaN, GaN, AlGaN, and AlInGaN alloys, are direct bandgap semiconductors, and the bandgap is continuously adjustable from 1.8 to 6.2eV. It is the preferred material for the production of high-brightness blue, green and white LEDs, and the products are widely used In large-screen color display, vehicles and traffic signals, indoor and outdoor decorative lighting, signs and signs, solar street lights, intelligent traffic control and general lighting projects, as well as light sources for mobile phones, computers, audio and home appliances, etc. [0003] GaN-based materials are mostly grown on sapphire substrates. Due to the large lattice mismatch between GaN-based materials...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/007
Inventor 聂虎臣叶明发涂逵
Owner LATTICE POWER (JIANGXI) CORP