Anisotropic conductive film, image display and semiconductor device
An anisotropic, conductive film technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as excessive bubbles, achieve the effects of suppressing bubbles, excellent moisture resistance, and suppressing the increase in connection resistance
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Embodiment 1
[0118] Preparation of anisotropic conductive film composition
[0119] Based on the total weight of the anisotropic conductive film in terms of solid content, mixing 20 wt% of epoxy resin containing polycyclic aromatic rings (HP4032D, DainipponInk & Chemicals Co., Ltd., Tg: 245 ° C); 10 wt% of epoxy resin containing dicyclopentadiene The epoxy resin of alkene ring (HP7200L, DainipponInk & Chemicals Co., Ltd., Tg: 157 ℃); 20wt% of phenoxy resin (YP50, NipponSteel & SumitomoMetal Co., Ltd.); 30wt% of curing agent (HX-3922, AsahiKasei Co., Ltd.); 5wt% Silica nanoparticles (R812, Degussa Co., Ltd.); and 15wt% conductive particles (AUL704, SekisuiChemical Co., Ltd.), prepare anisotropic conductive film composition (wherein, the conductive particles have 1300N / mm 2 30% K value and 60% recovery rate).
[0120] Preparation of anisotropic conductive film
[0121] The prepared film composition was stirred at room temperature (25° C.) for 60 minutes at a stirring speed that does no...
Embodiment 2
[0123] In addition to using a 1600N / mm 2 An anisotropic conductive film was prepared in the same manner as in Example 1 except for conductive particles having a K value of 30% and a recovery rate of 50%.
Embodiment 3
[0125] In addition to using a 2100N / mm 2 An anisotropic conductive film was prepared in the same manner as in Example 1 except for conductive particles having a K value of 30% and a recovery rate of 60%.
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