An Electrochemical Sensor Based on Nickel Hydroxide Modified Electrode
A nickel hydroxide, electrochemical technology, applied in the direction of material electrochemical variables, etc., to achieve the effect of good selectivity, fast response time, and high sensitivity
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Embodiment 1
[0015] (1) Preparation of silicon nanowires (SiNWs): 30 mL of 20% hydrofluoric acid (HF) and 35 mol / mL of AgNO 3 Solution 90mL to prepare HF-based etchant, after fully cleaning the silicon substrate, immerse in the etchant at room temperature for 45min; after etching, use 65% HNO 3 The sample was washed 7 times with the solution, and the obtained silicon nanowires were washed 7 times with deionized water, and then dried with nitrogen flow for 45 minutes;
[0016] (2) Preparation of Ni / SiNWs electrodes: Soak the silicon nanowires in a diluted hydrofluoric acid solution (3.6%, w / v) for 2.7 min, then take them out, then immerse them in 180 mL of nickel hydroxide solution, and add 10 mL of ammonia water at the same time, thereby A deposited nickel film is formed on the silicon nanowire, and the formed material is Ni / SiNWs, and a copper wire is bonded to the Ni / SiNWs with conductive epoxy glue;
[0017] (3) Preparation of electrochemical sensor: The Ni / SiNWs electrode prepared in ...
Embodiment 2
[0019] (1) Preparation of silicon nanowires (SiNWs): use 20% hydrofluoric acid (HF) 20mL and 35mol / mL AgNO 3 Solution 40mL to prepare HF-based etchant, after fully cleaning the silicon substrate, immerse in the etchant at room temperature for 30min; after etching, use 65% HNO 3 Wash the sample 5 times with the solution, wash the obtained silicon nanowires 5 times with deionized water, and then dry with nitrogen flow for 30 minutes;
[0020] (2) Preparation of Ni / SiNWs electrodes: Soak the silicon nanowires in diluted hydrofluoric acid solution (2%, w / v) for 1 min, then take them out, then immerse them in 180 mL of nickel hydroxide solution, and add 12 mL of ammonia water at the same time, so that A deposited nickel film is formed on the silicon nanowire, and the formed material is Ni / SiNWs, and a copper wire is bonded to the Ni / SiNWs with conductive epoxy glue;
[0021] (3) Preparation of electrochemical sensor: The Ni / SiNWs electrode prepared in step (2) was used as a workin...
Embodiment 3
[0023] (1) Preparation of silicon nanowires (SiNWs): use 20% hydrofluoric acid (HF) 20mL and 35mol / mL AgNO 3 Solution 70mL to prepare HF-based etchant, after fully cleaning the silicon substrate, immerse in the etchant at room temperature for 50min; after etching, use 65% HNO 3 The sample was washed 8 times with the solution, and the obtained silicon nanowires were washed 8 times with deionized water, and then dried for 50 minutes with nitrogen flow;
[0024] (2) Preparation of Ni / SiNWs electrodes: Soak silicon nanowires in diluted hydrofluoric acid solution (4.8%, w / v) for 3.5 min, then take them out, then immerse them in 140 mL of nickel hydroxide solution, and add 7 mL of ammonia water at the same time, thus A deposited nickel film is formed on the silicon nanowire, and the formed material is Ni / SiNWs, and a copper wire is bonded to the Ni / SiNWs with conductive epoxy glue;
[0025] (3) Preparation of electrochemical sensor: The Ni / SiNWs electrode prepared in step (2) was u...
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