Preparation method of high-temperature creep resistant grounding substrate for semiconductor equipment

Abstract

The invention relates to a method for preparing a pure aluminum coating on a metal or alloy substrate, and in particular relates to a preparation method of a high-temperature creep resistant grounding substrate for semiconductor equipment. The preparation method comprises the following steps: (1) pretreating a grounding substrate matrix; (2) putting the matrix on a special fixture; (3) spraying pure aluminum in a cold spraying mode; (4) performing heat treatment after spraying; and (5) performing subsequent treatment on the coating surface. The preparation method disclosed by the invention can be used for forming pure aluminum coatings on various metal or alloy substrates, and can ensure that a product keeps the performance such as high-temperature creep resistance of the substrate on the matrix and also has various properties of the pure aluminum coatings on the surface.

Description

technical field [0001] The invention relates to a method for preparing a pure aluminum coating on a metal or alloy substrate, in particular to a method for preparing a high-temperature creep-resistant ground substrate for semiconductor equipment. Background technique [0002] The ground substrate in semiconductor equipment is in the environment of high temperature plasma radiation and fluoride gas, which not only requires it to have good electrical conductivity, but also puts forward higher and higher requirements for its high temperature creep resistance. Pure aluminum material is an ideal conductive material for semiconductor equipment, especially large-scale integrated circuit equipment. minimal pollution. However, aluminum has a low melting point and can only be used at lower temperatures (below 300°C). With the requirements of process optimization design, the temperature of the chamber where the grounded substrate is located continues to increase, which has exceeded 35...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a high-temperature creep-resistant grounding substrate for semiconductor equipment, using materials with better high-temperature mechanical properties such as stainless steel, nickel alloy or heat-resistant steel as the high-temperature creep-resistant grounding substrate for semiconductor equipment On the substrate of the chip, an oxide-free pure aluminum coating with uniform thickness and good bonding force is prepared on the surface. On the one hand, the conductivity of pure aluminum and its compatibility with large-scale integrated circuit technology are used. Performance solves the problem of insufficient high temperature creep resistance of the ground substrate

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