Preparation and application of ZnO@CdTe-carboxylation C3N4 photoelectric DNA sensor
A C3N4, carboxylation technology, used in instruments, scientific instruments, material analysis by electromagnetic means, etc., to achieve the effect of improving optoelectronic properties, promoting optoelectronic properties, and enhancing optoelectronic properties
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Embodiment 1
[0036] Example 1 A ZnO CdTe-carboxylated C 3 N 4 Preparation method of photoelectric DNA sensor
[0037](1) A 1.0 cm×2.5 cm rectangular ITO conductive glass was ultrasonically cleaned with acetone, ultrapure water, and ethanol for 30 min, then dried with pure nitrogen, and used as a working electrode, platinum wire as a counter electrode, and a saturated calomel electrode As a reference electrode, it constitutes a three-electrode electrolytic cell;
[0038] (2) A layer of ZnO nanorods is grown on the surface of the ITO electrode;
[0039] (3) The working electrode prepared in (2) was immersed in the CdTe quantum dot solution, and a layer of CdTe was deposited on the ZnO nanorods on the surface of the working electrode by using the current-time method with a potential of -1.0 V and a deposition time of 200 s. Quantum dots, dry at room temperature;
[0040] (4) Drop 5 μL of carboxylated C 3 N 4 (3) to the surface of the modified working electrode, and dry in a refrigerat...
Embodiment 2
[0043] Example 2 A ZnO CdTe-carboxylated C 3 N 4 Preparation method of photoelectric DNA sensor
[0044] (1) A 1.0 cm×2.5 cm rectangular ITO conductive glass was ultrasonically cleaned with acetone, ultrapure water, and ethanol for 30 min, then dried with pure nitrogen, and used as a working electrode, platinum wire as a counter electrode, and a saturated calomel electrode As a reference electrode, it constitutes a three-electrode electrolytic cell;
[0045] (2) A layer of ZnO nanorods is grown on the surface of the ITO electrode;
[0046] (3) The working electrode prepared in (2) was immersed in the CdTe quantum dot solution, and a layer of CdTe was deposited on the ZnO nanorods on the surface of the working electrode by using the current-time method with a potential of -1.0 V and a deposition time of 300 s. Quantum dots, dry at room temperature;
[0047] (4) Drop-coat 15 μL of carboxylated C 3 N 4 (3) to the surface of the modified working electrode, and dry in a ref...
Embodiment 3
[0050] Example 3 A ZnO CdTe-carboxylated C 3 N 4 Preparation method of photoelectric DNA sensor
[0051] (1) A 1.0 cm×2.5 cm rectangular ITO conductive glass was ultrasonically cleaned with acetone, ultrapure water, and ethanol for 30 min, then dried with pure nitrogen, and used as a working electrode, platinum wire as a counter electrode, and a saturated calomel electrode As a reference electrode, it constitutes a three-electrode electrolytic cell;
[0052] (2) A layer of ZnO nanorods is grown on the surface of the ITO electrode;
[0053] (3) The working electrode prepared in (2) was immersed in the CdTe quantum dot solution, and a layer of CdTe was deposited on the ZnO nanorods on the surface of the working electrode by using the current-time method with a potential of -1.0 V and a deposition time of 400 s. Quantum dots, dry at room temperature;
[0054] (4) Drop 20 μL of carboxylated C 3 N 4 (3) to the surface of the modified working electrode, and dry in a refriger...
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