A light-emitting diode epitaxy method doped with high concentration te
A light-emitting diode, high-concentration technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limited physical and chemical properties, poor crystal quality of the epitaxial layer, and small amount of Te impurity introduced, so as to improve the luminescence Efficiency, improvement of crystal quality, effect of increasing incorporation efficiency
Active Publication Date: 2017-02-15
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology
However, the Te element is limited by its own physical and chemical characteristics. In the case of a large amount of Te impurities introduced during the epitaxial growth process, it is very easy to cause the crystal quality of the epitaxial layer to deteriorate.
However, the amount of Te impurity introduced is small, and there is a problem of poor current spreading effect.
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[0053] The present invention will be described in detail below with reference to the drawings and specific embodiments.
[0054] Refer to figure 1 As shown, the present invention discloses a high-concentration Te-doped light-emitting diode epitaxial structure. A buffer layer 2, a corrosion barrier layer 3, a roughening layer 4, a first type current spreading layer 5, The first type confinement layer 6, the active layer 7, the second type confinement layer 8, and the second type current spreading layer 9. Among them, the first-type current spreading layer 5 is composed of a 4-layer structure and a superlattice sandwiched between the layer structures.
[0055] Among them, the substrate 1 is a GaAs substrate with a thickness of 270 μm. The constituent material of the buffer layer 2 is a GaAs group III or 5 compound, and the thickness of the buffer layer 2 is 600 nm. The corrosion barrier layer 3 consists of two parts, and the constituent materials of each part adopt (Al 0.5 Ga 0.5 )...
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The invention discloses a high concentration Te doped light emitting diode epitaxial method. The method comprises the following steps of (1) forming a buffer layer, a corrosion barrier layer and a coarsening layer respectively on a substrate, (2) spreading the first layer structure of a first type current spreading layer on the coarsening layer, (3) carrying out the epitaxial growth of first group of superlattice on the first layer structure of the first type current spreading layer, (4) carrying out the epitaxial growth of a first type current spreading layer second layer structure on the first group of superlattice, (5) repeating the structures in steps (3) and (4) until the epitaxial growth of a first type current spreading layer nth structure on an n-1 group of superlattice, and (6) carrying out epitaxial growth of a first type limiting layer, an active layer, a second type limiting layer, and a second type current spreading layer on the first type current spreading layer nth structure. According to the manufactured light emitting diode epitaxial structure, the adsorption of short-wavelength light by impurities can be reduced, and the light emitting efficiency of a light emitting diode is effectively raised.
Description
Technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a high-concentration Te-doped light-emitting diode epitaxy method. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and have been widely used. However, in the prior art, the requirements for light-emitting diodes with higher brightness and better luminous efficiency have increased. The use of metal organic compound vapor phase epitaxial growth of an epitaxial structure with quantum wells can achieve higher internal quantum efficiency; and the use of metal mirrors and surface roughening and other inverted structure chip manufacturing methods can significantly improve the external quantum efficiency of light-emitting diodes. [0003] However, the adoption of the inverted chip structure will cause the first conductivity type placed at the bottom of the active layer to be reversed to the top of t...
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IPC IPC(8): H01L33/04H01L33/12H01L33/28
CPCH01L33/0062H01L33/04H01L33/12H01L33/14H01L33/305
Inventor 林志伟陈凯轩张永卓祥景姜伟杨凯蔡建九白继锋刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD