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High concentration Te doped light emitting diode epitaxial structure

A technology of light-emitting diodes and epitaxial structures, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as limited physical and chemical properties, poor crystal quality of epitaxial layers, and small amount of Te impurity introduced, so as to improve luminescence Efficiency, improvement of crystal quality, effect of increasing incorporation efficiency

Active Publication Date: 2015-02-04
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

However, the Te element is limited by its own physical and chemical characteristics. In the case of a large amount of Te impurities introduced during the epitaxial growth process, it is very easy to cause the crystal quality of the epitaxial layer to deteriorate.
However, the amount of Te impurity introduced is small, and there is a problem of poor current spreading effect.

Method used

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  • High concentration Te doped light emitting diode epitaxial structure
  • High concentration Te doped light emitting diode epitaxial structure
  • High concentration Te doped light emitting diode epitaxial structure

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Embodiment Construction

[0053] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0054] refer to figure 1 As shown in the present invention, a high-concentration Te-doped light-emitting diode epitaxial structure disclosed by the present invention forms a buffer layer 2, an corrosion barrier layer 3, a roughening layer 4, a first-type current spreading layer 5, and a second-type current spreading layer on a substrate 1, respectively. The first-type confinement layer 6 , the active layer 7 , the second-type confinement layer 8 , and the second-type current spreading layer 9 . Wherein, the first-type current spreading layer 5 is composed of 4 layers and a superlattice sandwiched between the layers.

[0055] Wherein, the substrate 1 is a GaAs substrate with a thickness of 270 μm. The material of the buffer layer 2 is GaAs III-V compound, and the thickness of the buffer layer 2 is 600nm. Corrosion barrier layer 3 is made up...

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Abstract

The invention discloses a high concentration Te doped light emitting diode epitaxial structure. A buffer layer, a corrosion barrier layer, a coarsening layer, a first type current spreading layer, a first type limiting layer, an active layer, a second type limiting layer, and a second type current spreading layer. One side of the active layer is provided with the first type current spreading layer, and the other side of the active layer is provided with the second type current spreading layer. The active layer and the first type current spreading layer are provided with the first type limiting layer. The active layer and the second type current spreading layer are provided with the second type limiting layer. The first type current spreading layer is an n-layer structure, superlattice is arranged between layers, Te is doped in the first type current spreading layer. According to the high concentration Te doped light emitting diode epitaxial structure, the adsorption of short-wavelength light by impurities can be reduced, and the light emitting efficiency of a light emitting diode is effectively raised.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a high-concentration Te-doped light-emitting diode epitaxial structure. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and have been widely used. However, in the prior art, the requirements for light-emitting diodes with higher brightness and better luminous efficiency are increased. The epitaxial structure with quantum wells grown by metal-organic compound vapor phase epitaxy can achieve higher internal quantum efficiency; and the chip manufacturing method using inverted structures such as metal mirrors and surface roughening can significantly improve the external quantum efficiency of light-emitting diodes. [0003] However, adopting an inverted chip structure will cause the first conductivity type placed at the bottom of the active layer to be reversed to the top of the active lay...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/12H01L33/28
CPCH01L33/04H01L33/12H01L33/285
Inventor 林志伟陈凯轩张永卓祥景姜伟杨凯蔡建九白继锋刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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