Thin film amorphous silicon solar cell based on antireflective structure and guided-mode resonance

A solar cell, amorphous silicon technology, applied in circuits, electrical components, photovoltaic power generation, etc., to achieve stable performance, flexible and convenient use

Active Publication Date: 2015-02-18
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Higher absorption can be achieved with a thicker absorber layer, but it is much larger than that required for optimal electrical properties (<200nm)

Method used

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  • Thin film amorphous silicon solar cell based on antireflective structure and guided-mode resonance
  • Thin film amorphous silicon solar cell based on antireflective structure and guided-mode resonance
  • Thin film amorphous silicon solar cell based on antireflective structure and guided-mode resonance

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0018] see first figure 1 , figure 1 It is the geometric structure of the thin-film amorphous silicon solar cell based on the anti-reflection structure and the guided mode resonance for the visible light band of the present invention. In the figure, regions 1 and 5 are uniform, respectively air (refractive index n 1 =1) and fused silica (refractive index n 2 = 1.46). Sunlight (including TE and TM polarized light) is incident on the device at a certain angle θ, the vibration direction of TE polarized light corresponding to the electric field vector is perpendicular to the incident plane, and the vibration direction of TM polarized light corresponding to the electric field vector is parallel to the incident plane. It can be seen from the figure that the thin-film amorphou...

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Abstract

The invention relates to a thin film amorphous silicon solar cell based on an antireflective structure and guided-mode resonance. The thin film amorphous silicon solar cell used for visible wavelengths ranging from 300 nanometers to 800 nanometers is characterized in that the top antireflective film of the solar cell is 55-60 nanometers in thickness, the period of the middle grating absorption layer is 505-515 nanometers, the middle grating absorption layer is 95-105 nanometers in thickness and 0.7-0.75 in duty ratio, and a waveguide absorption layer is 45-55 nanometers in thickness; when light comes in vertically, the average integral absorption efficiency of the light in the wavelengths of 300-800 nanometers is higher than 66%, the average integral absorption efficiency is large in angle independence, and the average integral absorption efficiency is higher than 60% in the incidence angle of 0-66 degrees. The thin film amorphous silicon solar cell based on the antireflective structure and guided-mode resonance has the advantages that the solar cell is machined by an electronic beam direct writing device combining with micro-electronics deep etching, and the solar cell is convenient in material taking, low in manufacturing cost, capable of achieving large-batch production, and promising in application prospect.

Description

technical field [0001] This patent relates to thin-film amorphous silicon solar cells, especially a thin-film amorphous silicon solar cell based on anti-reflection structure and guided mode resonance for visible light band. Background technique [0002] In general, there are two kinds of perfect absorbers: one has high absorption in a wide band range, called broadband absorber, which is mainly used in the field of solar cells; There is perfect absorption in a narrow bandwidth, called a selective absorber, which is mainly used to design high-sensitivity detectors, thermal imaging devices, and narrow-band absorption / thermal radiators. At present, the research on thin-film solar cells has become a research hotspot, and it is an important direction for the development of photovoltaic devices in the future. Its main advantage is that it can effectively reduce the cost and can be deposited on a flexible substrate, but at present, the absorption efficiency of thin-film amorphous s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/054G02B5/18
CPCY02E10/52H01L31/02167G02B5/003H01L31/052
Inventor 吴俊周常河
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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