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Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same

A transparent electrode and detector technology, applied in the field of blue-violet light detection, can solve the problems of low quantum efficiency of photodetectors, difficulty in absorbing long-wavelength light, and limitation of response speed, etc., and achieve high quantum efficiency, fast frequency response, and increased output The effect of capacitance

Active Publication Date: 2015-02-18
阿母芯微电子技术(中山)有限公司
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  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is difficult to effectively absorb long-wavelength light, the quantum efficiency of photodetectors is very low, and the response speed is limited.
However, according to Lambert's law, the absorption length of short-wavelength light in silicon is shorter, and the silicon film thickness required is smaller

Method used

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  • Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same
  • Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same
  • Transparent electrode grid-control transverse PIN blue and purple photo-detector and method for manufacturing same

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Embodiment Construction

[0030] like figure 1 As shown, the transparent electrode gate-controlled lateral PIN blue-violet light detector of this embodiment includes a P-type substrate 1, and the P-type substrate 1 is provided with an N well 2 and a deep N well 3 formed by ion implantation doping. The bottom of the well 2 is in contact with the deep N well 3 and is isolated on the upper part of the P-type substrate 1 to form an anti-P well 4. The two sides of the anti-P well 4 are provided with N wells arranged in a lateral gap by means of diffusion doping. + Zone 5 and P + District 6 (N + Zone 5 and P + The lateral spacing of region 6 is determined by the required light-receiving area), and the anti-P well 4 is located in N + Zone 5 and P + The surface of the area between the regions 6 is covered with a gate oxide layer 41, the surface of the gate oxide layer 41 is covered with a transparent conductive film 42, and the transparent conductive film 42 is provided with gate electrodes G, N + Zone 5 ...

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Abstract

The invention discloses a transparent electrode grid-control transverse PIN blue and purple photo-detector and a method for manufacturing the same. The photo-detector comprises a P (positive)-type substrate. N (negative) wells and a deep N well are isolated from one another to form a reversed P well in the P-type substrate, an N<+> zone and a P<+> zone are arranged in the reversed P well, a grid oxide layer, a transparent conducting thin film and a grid electrode G sequentially cover the surface, which is positioned between the N<+> zone and the P<+> zone, of the reversed P well, an anode A is arranged on the N<+> zone, and a cathode K is arranged on the P<+> zone. The method for manufacturing the transparent electrode grid-control transverse PIN blue and purple photo-detector includes isolating the N wells and the deep N well from one another to form the reversed P well on the P-type substrate; forming the N<+> zone and the P<+> zone on two sides of the reversed P well and respectively forming the anode A and the cathode K; sequentially manufacturing the grid oxide layer, the transparent conducting thin film and the grid electrode G on the upper surface of the reversed P well. The transparent electrode grid-control transverse PIN blue and purple photo-detector and the method have the advantages that the problem of conflict between the quantum efficiency and frequency response of existing photo-detectors can be effectively solved, and the transparent electrode grid-control transverse PIN blue and purple photo-detector is low in dark current, high in quantum efficiency, rapid in frequency response, big in input impedance and favorable for integration.

Description

technical field [0001] The invention relates to the technical field of blue-violet light detection, in particular to a transparent electrode grid-controlled transverse PIN blue-violet light detector and a preparation method thereof. Background technique [0002] Photo-detector (PD), as an optical signal reading device, plays a key role in optoelectronic systems. Blue-violet light detectors are widely used in the fields of blue light storage, medical and health care, and environmental monitoring. With the development of CMOS process technology, blue-violet photodetectors with high performance and optoelectronic integration compatible with CMOS process have become a research hotspot at present. Blue-violet photodetectors fabricated by CMOS technology are usually bipolar structures based on longitudinal PN junctions. The quantum efficiency and frequency response are mutually restricted, and the input impedance is small, which is not conducive to integration. In addition, the ...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/105H01L31/18
CPCH01L31/035209H01L31/035272H01L31/105H01L31/18Y02P70/50
Inventor 谢海情唐俊龙彭润伍曾承伟肖正周斌腾
Owner 阿母芯微电子技术(中山)有限公司
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