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Copper pour use aluminum nitride substrate pretreatment method

An aluminum nitride substrate and pretreatment technology, applied in the field of DBC board manufacturing, can solve the problems of low peel strength, high porosity, poor temperature cycle resistance, etc., to promote uniform growth, reduce process conditions, and improve wetting effect of ability

Active Publication Date: 2015-03-11
HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
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  • Application Information

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Problems solved by technology

This method has the following advantages: it not only significantly reduces the process conditions of thermal oxidation of the substrate, but also promotes the uniform growth of the oxide layer; it also improves the wettability of the substrate to copper oxide at high temperature, and improves the current aluminum nitride DBC substrate with high porosity and peeling. The problem of low strength and poor temperature cycle resistance simplifies the preparation process of aluminum nitride DBC

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  • Copper pour use aluminum nitride substrate pretreatment method
  • Copper pour use aluminum nitride substrate pretreatment method
  • Copper pour use aluminum nitride substrate pretreatment method

Examples

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example 1

[0035] Example 1, such as figure 2 The aluminum nitride DBC structure is shown, the ceramic thickness is 0.635mm, and the length and width are 76.2mm.

[0036] Put the self-made aluminum nitride substrate into the degreasing solution and ultrasonically clean it for 10 minutes, and the surface is clean and free of oil.

[0037] The aluminum nitride substrate was placed in a NaOH solution with a concentration of 0.1mol / L for activation, and ultrasonic treatment was used for 5 minutes, ultrasonic power was 60%, and water temperature was 60°C.

[0038] A transition layer was prepared on the surface of the activated aluminum nitride substrate by dipping method, the molar content of manganese nitrate in the transition layer was 0.01mol / L, copper sulfate was 0.01mol / L, and the additive sodium citrate was 0.005mol / L.

[0039] The aluminum nitride substrate with the prepared transition layer needs to be pretreated at 300°C and cooled naturally, so that the transition layer forms a...

example 2

[0041] Example two, such as figure 2 The aluminum nitride DBC structure is shown, the ceramic thickness is 0.635mm, and the length and width are 76.2mm. Put the self-made aluminum nitride substrate into the degreasing solution and ultrasonically clean it for 10 minutes, and the surface is clean and free of oil.

[0042] The aluminum nitride substrate was placed in a NaOH solution with a concentration of 0.1mol / L for activation, and ultrasonic treatment was used for 5 minutes, ultrasonic power was 60%, and water temperature was 60°C.

[0043] Prepare a transition layer on the surface of the activated aluminum nitride substrate by dipping method. The molar content of manganese nitrate in the transition layer is 0.01mol / L, copper sulfate is 0.005mol / L, calcium nitrate and aluminum sulfate are 0.001mol / L each, additives Sodium citrate 0.005mol / L.

[0044] The aluminum nitride substrate with the prepared transition layer needs to be pretreated at 300°C and cooled naturally, so t...

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Abstract

The invention discloses a copper pour use aluminum nitride substrate pretreatment method which is a key process in the preparation process of an aluminum nitride DBC (direct bond copper) plate, and the method comprises the following steps: 1, aluminum nitride substrate surface cleaning; 2, aluminum nitride substrate activation for exposure of a new high-activity surface of the aluminum nitride by use of an alkali lye; 3, preparation of an aluminum nitride substrate surface transition layer which is a composite layer containing copper, manganese, calcium, aluminum and other ions; and 4, thermal oxidation treatment of the aluminum nitride substrate surface to form a composite modified layer. The copper pour use aluminum nitride substrate pretreatment method reduces the harsh conditions of aluminum nitride surface pretreatment in the aluminum nitride DBC process; the prepared aluminum nitride transition layer is a composite oxide layer, can smoothly and fully wet copper oxide on the surface of an oxygen-free copper sheet and spread at high temperature, and reacts to bond, adhesion strength of the aluminum nitride and the copper sheet is high, the hole rate is low, and the product anti temperature cycle performance is good.

Description

technical field [0001] The invention belongs to the technical field of DBC board manufacturing, and relates to power semiconductor modules, semiconductor refrigerators, large-scale integrated circuits, high-power LEDs, and concentrating photovoltaics (CPV), especially a pretreatment method for copper-clad aluminum nitride substrates. . Background technique [0002] The DBC substrate is a metallized substrate that directly sinters copper sheets and ceramic substrates to form a copper / ceramic / copper sandwich structure. Copper and copper oxide are used to produce a Cu~O eutectic phase in a micro-oxygen atmosphere at 1064°C~1083°C. As a bonding agent between the copper sheet and the ceramic substrate, the thickness of the transition layer is micron, which hardly increases the thermal resistance, and at the same time makes the peel strength between the copper sheet and the ceramic substrate reach 60N / cm or more. Currently, oxide-type DBC substrates are widely used, such as Al 2...

Claims

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Application Information

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IPC IPC(8): C04B37/02C04B41/85
Inventor 张振文耿春磊许海仙崔嵩
Owner HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
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