Preparation method for polyvinylidene fluoride (PVDF)-based high voltage coefficient thin film

A high-voltage, thin-film technology, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, and can solve problems such as few reports on related properties.

Inactive Publication Date: 2015-03-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are few reports on the related properties of the composite structure of organic ferroelectric materials.

Method used

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  • Preparation method for polyvinylidene fluoride (PVDF)-based high voltage coefficient thin film
  • Preparation method for polyvinylidene fluoride (PVDF)-based high voltage coefficient thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The substrate material is cleaned to ensure the flatness of its surface, and the surface is treated with hydrophobicity; the substrate material can be quartz glass. Use iron stearate to wipe the surface repeatedly, wipe off the iron stearate residue attached to the surface with absorbent cotton, and then rinse the quartz glass substrate with deionized water.

[0021] Dissolve PVDF-based polymer P(VDF-TrFE) and PVDF-based polymer P(VDF-TrFE-CFE) organic ferroelectric polymer in dimethyl sulfoxide solution respectively, and the solution concentration is 0.01% by mass %.

[0022] Spread P(VDF-TrFE) and P(VDF-TrFE-CFE) organic ferroelectric polymer dimethyl sulfoxide solutions evenly into two Langmuir-Brockett equipments that have been injected with static ultrapure water. In the liquid tank, the resistance of ultrapure water is 18.2 megaohms. After the organic ferroelectric polymer is evenly distributed on the liquid surface, and the liquid surface is squeezed to form a f...

Embodiment 2

[0025] The substrate material is cleaned to ensure the flatness of its surface, and the surface is treated with hydrophobicity; the substrate material can be quartz glass. Use iron stearate to wipe the surface repeatedly, wipe off the iron stearate residue attached to the surface with absorbent cotton, and then rinse the quartz glass substrate with deionized water.

[0026] Dissolve PVDF-based polymer P(VDF-TrFE) and PVDF-based polymer P(VDF-TrFE-CFE) organic ferroelectric polymer in dimethyl sulfoxide solution respectively, and the solution concentration is 0.01% by mass %.

[0027] Spread P(VDF-TrFE) and P(VDF-TrFE-CFE) organic ferroelectric polymer dimethyl sulfoxide solutions evenly into two Langmuir-Brockett equipments that have been injected with static ultrapure water. In the liquid tank, the resistance of ultrapure water is 18.2 megaohms. After the organic ferroelectric polymer is evenly distributed on the liquid surface, and the liquid surface is squeezed to form a f...

Embodiment 3

[0030] The substrate material is cleaned to ensure the flatness of its surface, and the surface is treated with hydrophobicity; the substrate material can be quartz glass. Use iron stearate to wipe the surface repeatedly, wipe off the iron stearate residue attached to the surface with absorbent cotton, and then rinse the quartz glass substrate with deionized water.

[0031] Dissolve PVDF-based polymer P(VDF-TrFE) and PVDF-based polymer P(VDF-TrFE-CFE) organic ferroelectric polymer in dimethyl sulfoxide solution respectively, and the solution concentration is 0.01% by mass %.

[0032] Spread P(VDF-TrFE) and P(VDF-TrFE-CFE) organic ferroelectric polymer dimethyl sulfoxide solutions evenly into two Langmuir-Brockett equipments that have been injected with static ultrapure water. In the liquid tank, the resistance of ultrapure water is 18.2 megaohms. After the organic ferroelectric polymer is evenly distributed on the liquid surface, and the liquid surface is squeezed to form a f...

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Abstract

The invention discloses a preparation method for a polyvinylidene fluoride (PVDF)-based high voltage coefficient thin film. The preparation method is characterized in that PVDF-based organic ferroelectric polymers are dissolved in a dimethyl sulfoxide solution; through a Langmuir-Blodgett method, different PVDF-based organic ferroelectric polymers are transferred to a substrate alternately layer by layer; and annealing treatment is performed to remove interface residual solvent and guarantee good crystalline characteristic of the thin film, so as to form a PVDF-based organic polymer compound structure. The preparation method for the PVDF-based high voltage coefficient thin film is simple, can control the thickness of a single layer of thin film precisely, and provides guarantee for research of piezoelectric property of the PVDF-based organic ferroelectric polymer compound structure. Experiments prove that the piezoelectric coefficient of the PVDF-based organic ferroelectric polymer compound structure is remarkably improved.

Description

technical field [0001] The invention relates to a preparation technology of a high-voltage electric coefficient organic polymer composite film, specifically a preparation method based on a polyvinylidene fluoride-based organic ferroelectric polymer multilayer film structure. Background technique [0002] Ferroelectric materials are a class of materials that have spontaneous polarization within a certain temperature range, and the spontaneous polarization strength changes with the change of the external electric field. It is a class of hot materials studied in recent years. In recent years, based on polyvinylidene fluoride (PVDF for short), the copolymer of polyvinylidene fluoride and trifluoroethylene (P(VDF-TrFE) for short) is a ferroelectric and piezoelectric polymer material with excellent performance. , can be widely used as functional materials for energy conduction, information storage and infrared detection. Its piezoelectric properties are mainly used for mechanical...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/45C08J5/18C08L27/16
Inventor 赵晓林王建禄孟祥建孙硕沈宏韩莉孙璟兰褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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