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Reduce or eliminate nanotube defects in iii-nitride structures

A nanotube and nitride technology, applied in the field of nanotube defects, can solve problems such as limiting the efficiency of III-nitride devices

Active Publication Date: 2018-07-17
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the difference in lattice constant and thermal expansion coefficient between the substrate material and the III-nitride semiconductor material, defects are formed in the semiconductor during growth, which can limit the efficiency of III-nitride devices

Method used

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  • Reduce or eliminate nanotube defects in iii-nitride structures
  • Reduce or eliminate nanotube defects in iii-nitride structures
  • Reduce or eliminate nanotube defects in iii-nitride structures

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Embodiment Construction

[0017] figure 1 and 2 The formation of defect types referred to herein as nanotubes is illustrated. Nanotubes are particularly problematic defects due to their large size—typically a few microns long and tens or hundreds of angstroms in diameter. For example, in III-nitride materials, nanotubes may be at least 10 Å wide in some embodiments, and no greater than 500 Å wide in some embodiments. In some materials, such as SiC, the nanotubes can be 1 micron wide, or even wider. Nanotubes may be caused by impurities such as oxygen, silicon, magnesium, aluminum, and indium in the GaN film. The nanotubes may also be related to impurities or defects on the substrate surface, such as scratches, or the nanotubes may be present in the substrate itself and may continue from the substrate into the III-nitride material grown on the substrate. Nanotubes usually start at ~10 6 cm -2 Densities formed in III-Nitride devices are higher than the dislocation density in typical III-Nitride de...

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Abstract

Embodiments of the present invention include a III-nitride light-emitting layer arranged between the n-type region and a p-type region, a III-nitride layer including nanotube defects, and a III-nitride light-emitting layer arranged between the III-nitride light-emitting layer and the nanotube defect. III‑Nanotube termination layer between nitride layers. The nanotubes are terminated in a nanotube termination layer.

Description

technical field [0001] The present invention relates to the reduction or elimination of nanotube defects in III-nitride structures. Background technique [0002] Semiconductor light emitting devices including light emitting diodes (LEDs), resonant cavity light emitting diodes (RCLEDs), vertical cavity laser diodes (VCSELs) and edge emitting lasers are among the most efficient light sources currently available. Materials systems of current interest in the fabrication of high-brightness light-emitting devices capable of operating across the visible spectrum include group III-V semiconductors, especially binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, which have also been investigated. It is called III-nitride material. Typically, III-nitride light-emitting devices are epitaxially grown on sapphire, silicon carbide, III-nitride or other suitable substrates by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or oth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/12H01L33/32
CPCH01L33/007H01L33/025H01L33/12H01L33/32H01L2224/48095H01L2224/73265H01L2924/00014H01L33/0093H01L33/0025H01L33/0075H01L33/06H01L33/20H01L33/305H01L33/62H01L25/167H01L27/0248H01L33/0095H01L33/325H01S5/3086H01S5/32341
Inventor P.N.格里洛特I.H.维德森T.恩沙尼安P.P.德布
Owner LUMILEDS HLDG BV