A kind of manufacturing method of sialon ceramic target material
A technology of ceramic target material and production method, which is applied in the field of semiconductor sputtering, can solve the problems of large deviation of sialon ceramic target material processing, low yield rate of sialon ceramic target material, fragmentation of sialon ceramic target material, etc., and achieve faster Etching, improving machining accuracy, and improving cutting performance
Active Publication Date: 2016-12-28
宁波江丰热等静压技术有限公司
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Problems solved by technology
[0007] However, during the wire cutting process of the sialon ceramic target, the sialon ceramic target is often broken, and the processing deviation of the sialon ceramic target is large, and the processing accuracy is difficult to guarantee, resulting in the low yield of the sialon ceramic target. Low
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[0037] As mentioned in the background art, in view of the good mechanical properties of sialon ceramics, in the field of semiconductors, sialon ceramic thin films are widely used as wear-resistant parts in optical devices, semiconductor discrete devices and other components.
[0038] However, defects such as cracking of the Sialon ceramic target often occur when the Sialon ceramic target is wire-cut, which makes it difficult to guarantee the cutting accuracy of the Sialon ceramic target. Analysis of the reason is attributed to: in the wire cutting process of the Sialon ceramic target, the Sialon ceramic target is connected to the positive pole of the high-frequency pulse power supply, and the electrode wire (such as molybdenum wire) is connected to the negative pole. When the high-frequency pulse power supply is energized, a pulsed spark discharge needs to be generated between the sialon ceramic target and the moving electrode wire, and a high-temperature heat source is generat...
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Abstract
The invention provides a method for manufacturing a sialon ceramic target. The method includes: providing raw material powder including silicon nitride, aluminum oxide, aluminum nitride, sintering aid and conductive agent; after mixing the raw material powder evenly, performing hot pressing and sintering treatment to form a Sialon ceramic target. The sialon ceramics prepared by the present invention have good electrical conductivity and thermal conductivity, so that in the wire cutting process, pulsed spark discharges are continuously generated between the sialon ceramics and the moving electrode wire, and when the spark discharges Instantaneously generate high temperature, accelerate the erosion of the contact part between Sialon ceramics and electrode wire, improve the cutting performance of Sialon ceramics, improve the smoothness of cutting Sialon ceramics, and the machining accuracy of Sialon ceramics.
Description
technical field [0001] The invention relates to the field of semiconductor sputtering, in particular to a method for manufacturing a sialon ceramic target. Background technique [0002] Sialon is a basic structural unit of (Si, Al) (O, N) 4 Tetrahedral materials, which are often used as ceramic materials. Sialon ceramics including α-sialon (Me X Si 12-（m+n） al m+n )O n N 16-n , Me is a metal ion, including yttrium, etc.) and β-sialon (Si 6-Z al Z o Z N 8-Z ) Two variants. [0003] Among them, sialon ceramics are silicon nitride (Si 3 N 4 ) and alumina (Al 2 o 3 ) solid solution formed at high temperature, the two sialon ceramics inherit the characteristics of the crystal phase of silicon nitride and aluminum oxide, specifically high hardness and wear resistance, but also have their own characteristics. For example, α-sialon also has thermal shock resistance, and β-sialon has better fracture toughness than ordinary ceramics. Sialon ceramics have good thermal, ...
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IPC IPC(8): C04B35/599C04B35/58C04B35/622
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽王科
Owner 宁波江丰热等静压技术有限公司