Gallium arsenide nanowire array and preparation method thereof
A nanowire array and gallium arsenide technology, which is applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of difficulty in reducing the production cost of gallium arsenide nanowires and restricting the commercial application of gallium arsenide nanowires, etc. To achieve the effect of reasonable structure, low preparation cost and scientific preparation method
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Embodiment 1
[0034] The concrete steps of preparation are:
[0035] Step 1, first soak the quartz substrate in the mixed acid solution prepared by 12wt% chromic acid solution, 98wt% sulfuric acid solution and water according to the weight ratio of 1:20:2 and use deionized water After cleaning, it was blown dry, and then it was cleaned twice with oxygen plasma and hydrogen plasma respectively. Then, an aluminum layer and an amorphous silicon layer with a thickness of 180nm were respectively vapor-deposited thereon by electron beam evaporation method.
[0036] Step 2, first place the quartz substrate whose surface is covered with an aluminum layer and an amorphous silicon layer in a vacuum of 10 -3 Pa, annealed at 530° C. for 13 hours to obtain a quartz substrate whose surface is successively covered with a silicon polycrystalline layer and an aluminum layer with a crystal orientation of (111). Then the quartz substrate whose surface is covered with a silicon polycrystalline layer and an a...
Embodiment 2
[0040] The concrete steps of preparation are:
[0041] Step 1, first soak the quartz substrate in the mixed acid solution prepared by 12wt% chromic acid solution, 98wt% sulfuric acid solution and water according to the weight ratio of 1:20:2 and use deionized water After cleaning, it was blown dry, and then it was cleaned three times with oxygen plasma and hydrogen plasma respectively. Then, an aluminum layer and an amorphous silicon layer with a thickness of 200nm were respectively vapor-deposited thereon by electron beam evaporation method.
[0042] Step 2, first place the quartz substrate whose surface is covered with an aluminum layer and an amorphous silicon layer in a vacuum of 5×10 -3 Pa, annealed at 550° C. for 12.5 hours to obtain a quartz substrate whose surface is successively covered with a silicon polycrystalline layer and an aluminum layer with a crystal orientation of (111). Then the quartz substrate whose surface is covered with a silicon polycrystalline laye...
Embodiment 3
[0046] The concrete steps of preparation are:
[0047] Step 1, first soak the quartz substrate in the mixed acid solution prepared by 12wt% chromic acid solution, 98wt% sulfuric acid solution and water according to the weight ratio of 1:20:2 and use deionized water After cleaning, it was blown dry, and then it was cleaned twice with oxygen plasma and hydrogen plasma respectively. Then, an aluminum layer and an amorphous silicon layer with a thickness of 220nm were respectively vapor-deposited thereon by an electron beam evaporation method.
[0048] Step 2, first place the quartz substrate whose surface is covered with an aluminum layer and an amorphous silicon layer in a vacuum of 10 -4 Pa, annealing at 570° C. for 12 hours to obtain a quartz substrate whose surface is successively covered with a silicon polycrystalline layer and an aluminum layer with a crystal orientation of (111). Then the quartz substrate whose surface is covered with a silicon polycrystalline layer and ...
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