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Method for preparing graphene film on low-temperature substrate

A graphene film and substrate technology, applied in the field of graphene film preparation, can solve the problems of unsuitable graphene industrial production and high substrate temperature, and achieve the advantages of large-scale large-scale production, fast growth speed and low cost Effect

Inactive Publication Date: 2015-04-08
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there have been some research reports abroad on the growth of graphene by hot wire CVD, the substrate temperature they use is still high (800-1000°C), which is not suitable for the industrial production of graphene.

Method used

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  • Method for preparing graphene film on low-temperature substrate
  • Method for preparing graphene film on low-temperature substrate
  • Method for preparing graphene film on low-temperature substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Use 4cm×4cm high-purity quartz as the substrate, clean it ultrasonically with acetone, alcohol and deionized water, and place it in a magnetron sputtering chamber. The vacuum in the sputtering chamber is pumped to 6×10 -4 pa, turn on the RF power source of the copper target (purity: 99.99%) and preheat it for 10 minutes; start to control the rotation of the substrate support (20r / min), and feed Ar gas 30sccm; add RF voltage to make the gap between the target material and the anode cover To generate glow, set the sputtering power of the copper target to 150W, and pre-sputter for 10 minutes to remove surface oxidation and contamination; then open the baffle to start depositing a film, and grow a copper film with a thickness of 2 μm; after the growth is completed, turn the baffle Close quickly, and take out the sample after turning off the vacuum equipment.

[0028] (2) Putting the copper film substrate into a tube furnace and annealing at normal pressure in a hydroge...

Embodiment 2

[0033] (1) Use 4cm×4cm high-purity quartz as the substrate, clean it ultrasonically with acetone, alcohol and deionized water, and place it in a magnetron sputtering chamber. The vacuum in the sputtering chamber is pumped to 6×10 -4 Pa, turn on the RF power source of the copper target (purity: 99.99%) and preheat for 10 minutes; start to control the rotation of the substrate support (20r / min), and feed 30 sccm of Ar gas; add RF voltage to make the gap between the target material and the anode cover To generate glow, set the sputtering power of the copper target to 150W, pre-sputter for 10 minutes, remove surface oxidation and contamination; then open the baffle to start depositing a film, and grow a copper film with a thickness of 5 μm; after the growth is completed, turn the baffle Close quickly, and take out the sample after turning off the vacuum equipment.

[0034] (2) Putting the copper thin film substrate into a tube furnace and annealing at normal pressure in a hydroge...

Embodiment 3

[0039] (1) Use 4cm×4cm high-purity quartz as the substrate, clean it ultrasonically with acetone, alcohol and deionized water, and place it in a magnetron sputtering chamber. The vacuum in the sputtering chamber is pumped to 6×10 -4 pa, turn on the RF power source of the copper target (purity: 99.99%) and preheat it for 10 minutes; start to control the rotation of the substrate support (20r / min), and feed Ar gas 30sccm; add RF voltage to make the gap between the target material and the anode cover Generate a glow, set the sputtering power of the copper target to 150W, and pre-sputter for 10 minutes to remove surface oxidation and contamination; then open the baffle to start depositing a film, and grow a copper film with a thickness of 1 μm; after the growth is completed, turn the baffle Close quickly, and take out the sample after turning off the vacuum equipment.

[0040] (2) Putting the copper thin film substrate into a tube furnace and annealing at normal pressure in a hyd...

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Abstract

The invention discloses a method for preparing graphene on a low-temperature metal copper film substrate by adopting a hot wire CVD method. A prepared graphene film is a graphene nanocrystal. The method comprises the following processes of: (1) depositing a copper film on a quartz substrate by adopting a magnetron sputtering method; (2) annealing the deposited copper film; (3) growing the graphene film on the annealed copper film at the substrate temperature of 350-450 DEG C by adopting the hot wire CVD method; (4) transferring graphene. The method disclosed by the invention can be used for preparing the graphene film with a controllable layer number on the magnetron sputtering deposited low-cost copper film under the condition of the low-temperature substrate by adopting an ethyne gas-state carbon source or a polyphenylether solid-state carbon source and plays a guiding role on the popularization, application and industrialized production of the graphene.

Description

technical field [0001] The invention relates to a method for preparing a graphene film, in particular to a method for preparing a graphene film on a low-temperature substrate by using a hot wire CVD method. Background technique [0002] As the material basis for human survival and the stable development of society, materials have played an irreplaceable and important role since ancient times. At the same time, the environmental impact of obtaining and processing materials is increasing. Therefore, it is the general trend of material development to develop some environmentally friendly and abundant new materials to replace some old materials that are scarce in raw materials or easily pollute the environment. [0003] Graphene has excellent electrical, optical and mechanical properties, and has received extensive attention since it was discovered by humans. This two-dimensional honeycomb structure composed of closely stacked carbon atoms has promising characteristics such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 沈鸿烈尤佳毅唐群涛
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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