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Preparation method for low-temperature polycrystalline silicon film

A low-temperature polysilicon and thin-film technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problems of high manufacturing cost and small grain size of low-temperature polysilicon.

Active Publication Date: 2015-04-08
TRULY HUIZHOU SMART DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the above technical problems, the present invention provides a method for preparing a low-temperature polysilicon thin film, which solves the technical problems of high manufacturing cost and small grain size of low-temperature polysilicon

Method used

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  • Preparation method for low-temperature polycrystalline silicon film
  • Preparation method for low-temperature polycrystalline silicon film
  • Preparation method for low-temperature polycrystalline silicon film

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preparation example Construction

[0035] The invention provides a method for preparing a low-temperature polysilicon thin film, which is characterized in that it comprises the following steps:

[0036] Step 1: Using plasma-enhanced chemical vapor deposition (PECVD) technology, a buffer layer and an amorphous silicon layer are successively formed on the substrate, and the buffer layer is between the substrate and the amorphous silicon layer;

[0037] Step 2: Using photolithographic patterning technology and element doping technology, select doping elements to selectively dope the amorphous silicon layer, and form a periodic structure in the amorphous silicon layer with alternating doped regions and non-doped regions;

[0038] Step 3: irradiating and crystallizing the doped amorphous silicon layer with a laser to obtain a low-temperature polysilicon film.

Embodiment 1

[0041] In this embodiment, the laser used to prepare low-temperature polysilicon is an excimer laser.

[0042] The invention provides a method for preparing a low-temperature polysilicon film, comprising the following steps:

[0043] In step one, a buffer layer 2 is first formed on the substrate 1 by using plasma enhanced chemical vapor deposition (PECVD), and then an amorphous silicon layer 3 is formed on the buffer layer.

[0044] In this step, the buffer layer prevents impurities on the substrate from entering the amorphous silicon layer and reduces defects in the amorphous silicon layer. The buffer layer uses a composite layer of SiNx and SiO2. First, coat a layer of SiNx film on the substrate, and then coat SiO2 film. The thickness of the buffer layer is 1500 angstroms to 3000 angstroms. Of course, the thickness of the buffer layer can also be set to other values ​​according to actual preparation needs.

[0045] The substrate can be selected from resin substrate, alkali-f...

Embodiment 2

[0057] In this embodiment, the laser used for preparing low-temperature polysilicon is a long-wavelength laser such as a solid-state laser, and the wavelength range of their output light is in the visible light band or the near-infrared light band.

[0058] The invention provides a method for preparing a low-temperature polysilicon film, comprising the following steps:

[0059] In step one, a buffer layer 2 is first formed on the substrate 1 by using plasma enhanced chemical vapor deposition (PECVD), and then an amorphous silicon layer 3 is formed on the buffer layer.

[0060] In this step, the buffer layer prevents impurities on the substrate from entering the amorphous silicon layer and reduces defects in the amorphous silicon layer. The buffer layer uses a composite layer of SiNx and SiO2. First, coat a layer of SiNx film on the substrate, and then coat SiO2 film. The thickness of the buffer layer is 1500 angstroms to 3000 angstroms. Of course, the thickness of the buffer ...

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Abstract

The invention discloses a preparation method for a low-temperature polycrystalline silicon film, and the specific steps of the method are that: forming a buffering layer and a noncrystalline silicon layer successively on a substrate; carrying out regioselectivity doping of the noncrystalline silicon layer through the technology of element doping, and forming a periodic structure at the noncrystalline silicon layer, wherein the periodic structure is formed by the alternative arrangement of doped regions and non-doped regions; and carrying out laser crystallization of the noncrystalline silicon layer, and obtaining the low-temperature polycrystalline silicon film. When the noncrystalline silicon layer is irradiated by laser, a complete fusion region and a non-complete fusion region are formed because the doped regions and the non-doped regions are different in capability of absorbing laser energy, and there is a lateral temperature gradient between the complete fusion region and the non-complete fusion region, thereby prompting and controlling the super lateral crystallization of crystal nucleus, and increasing the crystal grain size. Through doping, the super lateral crystallization condition is established, thereby facilitating the growth of a large-size crystal grain. Meanwhile, the method can change the absorption capability of noncrystalline silicon layer, and a solid laser and other cheap lasers are employed for crystallization, thereby reducing the preparation cost.

Description

technical field [0001] The invention relates to the technical field of polysilicon, in particular to a method for preparing a low-temperature polysilicon thin film based on super lateral crystallization formed by doping. Background technique [0002] Polycrystalline silicon (p-Si) has a carrier mobility much greater than that of amorphous silicon (a-Si). Polycrystalline silicon (p-Si) is comparable to the high carrier mobility of single crystal silicon and is often used instead of amorphous silicon in thin film transistors. (TFT) active layer, so it is widely used in integrated peripheral driven active liquid crystal display (AMLCD) and active organic light emitting diode (AMOLED). The substrate of the polysilicon thin film of the flat panel display is glass which is difficult to withstand the high temperature process. Under the constraints of this condition, the low temperature polysilicon (LTPS) technology is an inevitable choice for the industry. [0003] As far as the c...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L21/266H01L21/268
CPCH01L21/02422H01L21/02532H01L21/02675H01L21/26506H01L21/266
Inventor 陈卓陈建荣任思雨苏君海李建华黄亚清
Owner TRULY HUIZHOU SMART DISPLAY
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