Semiconductor device and method of forming the same

Abstract

A semiconductor device and its forming method, comprising: providing a substrate, the substrate including a storage area and a peripheral area; forming a storage area mask layer on the storage area substrate; forming a storage area surrounding the storage area on the storage area substrate The protective ring of the mask layer of the peripheral area; the floating gate layer of the peripheral area and the mask layer of the peripheral area are sequentially formed on the substrate of the peripheral area; the protective layer is formed on the mask layer of the storage area, the guard ring and the mask layer of the peripheral area, and the The protection layer in the storage area is the storage area protection layer, and the protection layer in the peripheral area is the peripheral area protection layer; the peripheral area protection layer, the peripheral area mask layer and the peripheral area floating gate layer are removed in sequence to expose the substrate in the peripheral area. The present invention protects the storage area when removing the film layer on the substrate in the peripheral area by setting a protective layer and a protective ring surrounding the storage area, so that the storage area is not affected by the etching process of the peripheral area and can effectively expand the area of ​​the peripheral area. The etching process window improves the yield rate of device manufacturing and reduces the cost of device manufacturing.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] The etching process is one of the commonly used processes in the field of semiconductor manufacturing. In the etching process, photoresist is often used as a mask. However, with the gradual reduction of the size of semiconductor devices, it is easy to cause light scattering during exposure, so that the formed photoresist pattern is deviated from the original design. Therefore, more hard masks are used in semiconductor etching, the hard masks are etched using photoresist as a mask, and then devices are formed by etching using the hard mask as a mask. After the device is formed, the hard mask is removed. [0003] refer to Figure 1 to Figure 2 , shows a schematic diagram of a method for forming a semiconductor device in the prior art. Here, the formation of an embedded flash memory is t...

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Problems solved by technology

[0006] However, in the semiconductor device formed by the prior art, when removing the mask layer 14b of the peripheral region, the mask layer 14a of the storage region is also easily removed, so that the devices in the storage region are damaged during the manufacturing process of the peripheral circuit

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