Silicon carbide wafer bevel grinding, lapping and polishing machine and method of operation

A silicon carbide crystal and polishing machine technology, which is applied in the direction of grinding/polishing equipment, surface polishing machine tools, polishing compositions containing abrasives, etc., can solve the problems of wafer grinding, difficulty in controlling the grinding angle, large width and dimension errors, Solve the problems of low polishing processing efficiency, and achieve the effects of stable width, high processing accuracy and high work efficiency

Active Publication Date: 2017-01-25
山东粤海金半导体科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. The chamfering slope of the wafer has a large width and dimension error after grinding and polishing;
[0004] 2. The chamfering slope of the wafer has poor angle consistency after grinding and polishing;
[0005] 3. The grinding and polishing process of the chamfering slope of the wafer is low in efficiency and high in cost
[0006] 4. It is difficult to control the grinding and grinding angle of the chamfering slope of the wafer, and the error is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide wafer bevel grinding, lapping and polishing machine and method of operation
  • Silicon carbide wafer bevel grinding, lapping and polishing machine and method of operation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Such as figure 1 and figure 2Shown, a kind of silicon carbide wafer bevel grinding, grinding and polishing machine, it comprises support plate 1, the rotating shaft 2 that is connected with support plate 1, the driving motor 3 that is connected with rotating shaft 2, described driving motor 3 installs On the motor bracket 4, the motor bracket 4 is installed on the vertical arm 5, the vertical arm 5 is connected to the horizontal arm 6, the horizontal arm 6 is connected to the carriage 7, and the carriage 7 is connected to the The screw rods 9 are connected, the outer circumference of the screw rod 9 is provided with a bushing sleeve 10, the bushing sleeve 10 is fixed on the column 11, the lower end of the screw rod 9 is connected with the first bevel gear 12, and the first bevel gear 12 is connected with the second bevel gear 13, Described second bevel gear 13 links to each other with adjusting shaft 14, and adjusting shaft 14 links to each other with running wheel 15...

Embodiment 2

[0044] A circular silicon carbide wafer bevel grinding, lapping and polishing method, which comprises the following steps:

[0045] a. If figure 1 As shown, at first the circular silicon carbide wafer 25 to be processed is bonded on the support sheet 1, then a grinding wheel is first installed on the upper end of the shaft 20, and then the motor 21 is started, and the motor 21 drives the grinding wheel on the shaft 20 to rotate;

[0046] b, rotating the runner 15, the runner 15 drives the adjustment shaft 14 to rotate, then the adjustment shaft 14 drives the second conical gear 13 and the first conical gear 12 to rotate in turn, the first bevel gear 12 thus drives the screw rod 9 to rotate, and the screw rod 9 drives the slide The frame 7 moves up and down, thereby driving the horizontal pivoting arm 6 and the vertical pivoting arm 5 to move up and down in turn, and then the vertical pivoting arm 5 drives the driving motor 3 on the motor bracket 4 to move up and down, thereby ...

Embodiment 3

[0054] Rectangular silicon carbide wafer bevel grinding, grinding and polishing method, it comprises the following steps:

[0055] a, first bond the rectangular silicon carbide wafer to be processed on the support sheet 1, then install the grinding wheel on the upper end of the shaft 20, then start the motor 21, and the motor 21 drives the grinding wheel on the shaft 20 to rotate;

[0056] b, rotating the runner 15, the runner 15 drives the adjustment shaft 14 to rotate, then the adjustment shaft 14 drives the second conical gear 13 and the first conical gear 12 to rotate in turn, the first bevel gear 12 thus drives the screw rod 9 to rotate, and the screw rod 9 drives the slide The frame 7 moves up and down, thereby driving the horizontal pivoting arm 6 and the vertical pivoting arm 5 to move up and down in turn, and then the vertical pivoting arm 5 drives the driving motor 3 on the motor bracket 4 to move up and down, thereby adjusting the circular carbonization to be process...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a silicon carbide wafer bevel grinding, milling and polishing machine and an operation method thereof. The silicon carbide wafer bevel grinding, milling and polishing machine comprises a supporting sheet (1), a rotating shaft (2), a driving motor (3), a motor bracket (4), a vertical rotating arm (5), a horizontal rotating arm (6), a slide frame (7) and a screw rod (9) which are sequentially connected, wherein the lower end of the screw rod (9) is sequentially connected with a first cone gear (12), a second cone gear (13), an adjusting shaft (14) and a rotating wheel (15); a machining tool (19) of a silicon carbide wafer is arranged below the supporting sheet (1). The silicon carbide wafer bevel grinding, milling and polishing machine is reasonable in structural design, convenient to operate and high in working efficiency, bevel grinding, milling and polishing integrated machining can be performed on the silicon carbide wafer, the working efficiency is high, the roughness of a polished bevel can be smaller than 0.1 micron, the machining precision is high, and the applicability is high. The operation method can be applied to the bevel grinding, milling and polishing integrated machining on the silicon carbide wafer which is round or not round.

Description

technical field [0001] The invention relates to silicon carbide wafer processing equipment used in the optoelectronic industry, in particular to a silicon carbide wafer bevel grinding, grinding and polishing processing equipment and a method for grinding, grinding and polishing the bevel of the silicon carbide wafer. Background technique [0002] Silicon carbide wafers have been widely used in optoelectronics, microelectronics, optics, lasers, superconductivity, national defense and other fields. During the manufacturing process of silicon carbide wafers, the material that falls off due to chipping of silicon carbide wafers will scratch the surface of the wafer, which is one of the most important reasons for the deterioration of the plane grinding and polishing quality of silicon carbide wafers. In order to avoid chipping of the wafer, the wafer is usually chamfered before the wafer plane is processed, and the chamfered surface is ground, ground and polished. Existing wafer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B24B7/22B24B37/10B24B29/02B24B47/12C09G1/02
CPCB24B9/065B24B29/02B24B37/105B24B47/12C09G1/02
Inventor 周海
Owner 山东粤海金半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap