Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

One-step type manufacturing method for silicon-dioxide-based diffraction grating

A technology of diffraction grating and silicon dioxide, which is applied in the direction of diffraction grating, photographic plate-making process of pattern surface, optics, etc., can solve the problems that have not been reported in the field of precision optical instrument manufacturing, and achieve shortening of production cycle, reduction of production cost, Effects of Accuracy and Resolution Improvement

Inactive Publication Date: 2015-04-29
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Substrate Integrity Imprint Lithography (SCIL) is currently mainly used in the manufacture of light-emitting diodes, but it has not been reported in the field of precision optical instrument manufacturing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-step type manufacturing method for silicon-dioxide-based diffraction grating
  • One-step type manufacturing method for silicon-dioxide-based diffraction grating
  • One-step type manufacturing method for silicon-dioxide-based diffraction grating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The nanoimprinting equipment used in the embodiment is SUSS MicroTec-SCIL, the lithography equipment is SUSS MA6 lithography machine, nanoimprinting glue: purchased from Philips in the Netherlands, the label is: SOL-GEL V5-500;

[0031] The predetermined thickness of the nano-imprint adhesive of spin coating in the embodiment is 500nm;

[0032] Taking the production of a high-quality diffraction grating with sub-micron parallel equal width and equal spacing as an example, the production steps are as follows:

[0033] Step 1: Install the nano-imprint element equipment on the lithography machine, change the working mode of the lithography machine to be in the nano-imprint mode, and then place the soft template whose working surface matches the shape of the grating to be processed on the nano-imprint On the stencil mask of the device and vacuum fixed;

[0034] Step 2: Pretreat the silicon substrate used, first ultrasonic cleaning with acetone for 15 minutes, then ultrason...

Embodiment 2

[0045]The nanoimprinting equipment used in the embodiment is SUSS MicroTec-SCIL, the lithography equipment is SUSS MA6 lithography machine, nanoimprinting glue: purchased from Philips in the Netherlands, the label is: SOL-GEL V5-500;

[0046] The predetermined thickness of the nano-imprint adhesive of spin coating in the embodiment is 500nm;

[0047] Taking a diffraction grating with periodic regular holes on the submicron scale as an example, the fabrication steps are as follows:

[0048] Step 1: Install the nano-imprint element equipment on the lithography machine, change the working mode of the lithography machine to be in the nano-imprint mode, and then place the soft template whose working surface matches the shape of the grating to be processed on the nano-imprint On the stencil mask of the device and vacuum fixed;

[0049] Step 2: Pretreat the silicon substrate used, first ultrasonic cleaning with acetone for 15 minutes, then ultrasonic cleaning with ethanol for 15 min...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a one-step type manufacturing method for a silicon-dioxide-based diffraction grating. The manufacturing method is characterized in that one-step type manufacturing of the slit diffraction grating based on silicon dioxide materials is achieved based on the SCIL technology, and the accuracy and the resolution ratio of a glass grating are further improved. Compared with an existing grating processing means, the one-step type manufacturing method has the advantages that the grating manufacturing cost is greatly reduced, the grating production manufacturing technology is simplified, the grating manufacturing period is shortened, and the grating production efficiency is improved. By means of the one-step type manufacturing method, the diffraction grating high in accuracy, quality and resolution rate can be manufactured, the requirement of an optical instrument such as a new-generation spectrograph for the grating is met, and the broad market application prospects are achieved.

Description

technical field [0001] The invention relates to a one-step manufacturing method of a silicon dioxide-based diffraction grating, belonging to the field of optical device manufacturing. Background technique [0002] Grating, also known as diffraction grating, is an optical element that uses the principle of multi-slit diffraction to disperse light. It is a flat glass or metal sheet engraved with a large number of parallel equal-width and equidistant slits. At present, there are four mature methods for making gratings: mechanical engraving, photoelectric engraving, replication and holography. [0003] Mechanical engraving is an ancient method, but it is reliable. The gap engraving technology is relatively mature. However, it takes 4 days and nights to engrave a 100×100mm grating. Therefore, it is required that the machine and the environment remain accurate and constant for a long time. This point It is difficult to achieve in the actual production process. In addition, high-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B5/18G03F7/00
CPCG02B5/1857G03F7/0002
Inventor 刘瑞斌郭帅
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com