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Improvement method of backside metallization of igbt

A technology of backside metallization and backside metallization, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of Ag falling off, Ni and Ag adhesion decrease, etc., so as to avoid falling off, improve performance and yield Effect

Active Publication Date: 2017-08-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
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Problems solved by technology

[0015] But the metal peeling that the existing oven bake of long-term high-temperature treatment can cause: oven Bake makes the grain size (grain size) of metal Ag become larger, and the gap between the grains of metal Ag will also become larger like this, oxygen It will reach the surface of metal Ni through small gaps to oxidize it, so that the adhesion between Ni and Ag will become smaller, causing Ag to fall off

Method used

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  • Improvement method of backside metallization of igbt
  • Improvement method of backside metallization of igbt
  • Improvement method of backside metallization of igbt

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Embodiment Construction

[0042] Such as figure 2 Shown is the flowchart of the method of the embodiment of the present invention; for the device structure of the IGBT formed by the method of the embodiment of the present invention, please refer to figure 1 As shown, the method for improving the backside metallization of the IGBT in the embodiment of the present invention includes the following steps:

[0043] Step 1: Complete the front pattern process on the front surface of the silicon substrate 101 .

[0044] Such as figure 1As shown, the front pattern process of the IGBT includes a cell area and a withstand voltage protection area, and the withstand voltage protection area surrounds the periphery of the cell area. The unit cell structure of the IGBT is formed in the cell region, and the unit structure of the IGBT includes:

[0045] The P well 104 is formed on the front side of the silicon substrate 101 .

[0046] A polysilicon gate 102 , a gate oxide layer 103 is isolated between the polysilic...

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Abstract

The invention discloses a method for improving back metallization of an IGBT (Insulated Gate Bipolar Transistor). The method comprises the following steps: finishing a front graphic process on the front surface of a silicon substrate; finishing a back thinning process, a back filling process and a laser annealing process; performing DHF washing on the back surface of the silicon substrate; forming a back metal layer formed by superposing Al, Ti, Ni and Ag; performing an oven bake process. According to the method, good back contact can be formed, peeling of back metal can be avoided, the product performance is improved, and the product yield is increased.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to an improved method for backside metallization of an IGBT. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). The advantages of high input impedance and low conduction voltage drop of power transistor (GTR), that is, bipolar junction transistor with high voltage and high current resistance. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. [0003] For the IGBT process, it is very important to be able to form a good back metal contact to reduce the turn-on voltage. Especially in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/02
CPCH01L21/02068H01L21/28518H01L29/66348
Inventor 马彪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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