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Method for forming reverse-conducting IGBT (insulated gate bipolar translator) backside process

A reverse-side process and reverse conduction technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as high process cost, glue removal, and back alignment problems, achieve process compatibility and reduce process cost , to avoid the effect of backside alignment problem and deglue problem

Inactive Publication Date: 2015-04-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0021] It can be seen from the above that the back N+ region 112 of the FRD device of the RC-IGBT in the existing method is formed through a back process and needs to be defined by a photolithography process, which not only has high process costs, but also causes back alignment and deglue problems. That is to say, there will be compatibility problems between the front and the back

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  • Method for forming reverse-conducting IGBT (insulated gate bipolar translator) backside process
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  • Method for forming reverse-conducting IGBT (insulated gate bipolar translator) backside process

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Embodiment Construction

[0046] Such as Figure 4 As shown, it is a flow chart of the method for forming the reverse conduction type IGBT backside process of the embodiment of the present invention; Figure 5A to Figure 5E As shown, it is a schematic diagram of the back structure of the reverse conduction IGBT in each step of the method of the embodiment of the present invention; the method of the embodiment of the present invention includes the following steps:

[0047] Step 1, such as figure 1 As shown, the front side process of the reverse conduction type IGBT is completed on the front side of the N-type doped substrate 101 .

[0048] Such asfigure 1 As shown, the schematic diagram of the structure of the reverse conduction IGBT; the IGBT and FRD integrated with the reverse conduction IGBT, the front process structure of the IGBT includes the cell area and the withstand voltage protection area, and the withstand voltage protection area surrounds the peripheral side of the cell area . The unit ce...

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Abstract

The invention discloses a method for forming a reverse-conducting IGBT (insulated gate bipolar translator) backside process. The method comprises the following steps: finishing a frontside process; carrying out backside thinning, and carrying out first-time N-type heavily doped ion implantation on the backside to form an N-type field cut-off layer; carrying out heavily doped ion implantation on the whole backside; carrying out first-time laser annealing on the whole region of the backside and activating a boron ion implantation region; carrying out second-time N-type heavily doped ion implantation on the whole backside; carrying out second-time laser annealing on the partial region of the backside and activating a second-time N-type heavily doped ion implantation region of a second-time laser annealing region; forming a backside metal layer. According to the method disclosed by the invention, a photoetching process is not required; the process cost can be reduced; the problems about backside alignment and degumming caused by the backside photoetching process are solved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for forming a backside process of a reverse conduction (RC) IGBT. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). The advantages of high input impedance and low conduction voltage drop of power transistor (GTR), that is, bipolar junction transistor with high voltage and high current resistance. [0003] However, in the application of IGBT products, it is necessary to match the fast recovery diode (FAST RECOVERED DIODE, FRD) product of the corresponding specification in parallel as the current discharge circuit when it is turned off to protect the IGBT chip. [0004] Since IGBT products and FRD products have different...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/265H01L21/304
CPCH01L21/265H01L21/268H01L29/66325
Inventor 马彪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP