Manufacturing method for metal interconnecting structure

A technology of metal interconnection structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. The etching process is easy, the thickness of the photoresist is reduced, and the effect of resisting large currents is improved

CN104576516AActive Publication Date: 2015-04-29SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2015-04-29

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Abstract

The invention discloses a manufacturing method for a metal interconnecting structure. The manufacturing method comprises the following steps: providing a substrate, and growing or depositing a medium layer on the substrate; performing photoetching to form a contact hole window; depositing a first layer of metal film; performing photoetching to form a first layer of metal interconnecting window; depositing a second layer of metal film; performing photoetching to form a second layer of metal interconnecting window, and completely packaging and superposing the first layer of metal interconnecting window with the second layer of metal interconnecting window to form the metal interconnecting structure. According to the manufacturing method, the thickness of the metal interconnecting structure can be increased, large current resistance and high power resistance of a circuit can be improved, a metal photoetching process can be easily carried out, required photoresist thickness can be reduced, and adverse influence of load effect due to relatively thick metal can be reduced.
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Description

technical field

[0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a metal interconnection structure manufacturing method. Background technique

[0002] The application of metals and metallic materials in integrated circuit processing is called metallization. Most modern metal systems use aluminum-copper-silicon alloys as interconnect metal materials in integrated circuit processes. Such as Figure 1A to Figure 1E As shown, it is a schematic diagram of the metal interconnection structure in each step of the manufacturing method of the existing metal interconnection structure; the general single-layer metal (SLM) interconnection is realized in the manufacturing method of the existing metal interconnection structure, and the forming process includes the following steps :

[0003] Step 1, such as Figure 1A As shown, a substrate 102 is provided, on which a doped region 101 that needs to be drawn out through a met...

Examples

Embodiment Construction

[0031] Such as figure 2 Shown is a flowchart of a method for manufacturing a metal interconnection structure according to an embodiment of the present invention; as Figure 3A to Figure 3H Shown is a schematic diagram of the metal interconnection structure in each step of the method of the embodiment of the present invention. The manufacturing method of the metal interconnection structure according to the embodiment of the present invention includes the following steps:

[0032] Step 1, such as Figure 3A As shown, a substrate 2 is provided, on which a doped region 1 that needs to be drawn out through a metal interconnection structure is formed, and the doped region 1 is formed by implantation or diffusion. Such as Figure 3B As shown, after the final implantation and diffusion are completed, a dielectric layer 3 is grown or deposited on the substrate 2, and the dielectric layer 3 serves as an interlayer film.

[0033] Preferably, the dielectric layer 3 is an oxide dielec...