Manufacturing method for metal interconnecting structure

Abstract

The invention discloses a manufacturing method for a metal interconnecting structure. The manufacturing method comprises the following steps: providing a substrate, and growing or depositing a medium layer on the substrate; performing photoetching to form a contact hole window; depositing a first layer of metal film; performing photoetching to form a first layer of metal interconnecting window; depositing a second layer of metal film; performing photoetching to form a second layer of metal interconnecting window, and completely packaging and superposing the first layer of metal interconnecting window with the second layer of metal interconnecting window to form the metal interconnecting structure. According to the manufacturing method, the thickness of the metal interconnecting structure can be increased, large current resistance and high power resistance of a circuit can be improved, a metal photoetching process can be easily carried out, required photoresist thickness can be reduced, and adverse influence of load effect due to relatively thick metal can be reduced.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a metal interconnection structure manufacturing method. Background technique [0002] The application of metals and metallic materials in integrated circuit processing is called metallization. Most modern metal systems use aluminum-copper-silicon alloys as interconnect metal materials in integrated circuit processes. Such as Figure 1A to Figure 1E As shown, it is a schematic diagram of the metal interconnection structure in each step of the manufacturing method of the existing metal interconnection structure; the general single-layer metal (SLM) interconnection is realized in the manufacturing method of the existing metal interconnection structure, and the forming process includes the following steps : [0003] Step 1, such as Figure 1A As shown, a substrate 102 is provided, on which a doped region 101 that needs to be drawn out through a met...

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Problems solved by technology

However, there are two important problems based on the typical metal interconnection process: ① the thicker the metal is etched, the thicker the thickness of the photoresist is required to protect the metal interconnection window 104a, but there is a limit to the coating thickness of the photoresist in the process, otherwise Abnormal phenomena such as unclean photolithographic development will occur; ②Excessively thick metal deposition will cause the metal spacing to become smaller. Circuit fails due to short circuit

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