A kind of preparation method of intermetallic compound film
A technology of intermetallic compounds and films, applied in electrolytic coatings, surface reaction electrolytic coatings, coatings, etc., can solve problems such as high cost, high energy consumption, and slow film growth rate, and achieve accelerated growth rate and fast growth rate , Improve the effect of mechanical properties
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Embodiment 1
[0046] Such as figure 1 , figure 2 with Figure 5 Shown, the preparation method of intermetallic compound thin film of the present invention can be realized by following specific processing steps:
[0047] Step 1: providing a first metal substrate of single crystal Cu, sputtering a first solder metal layer of Sn with a thickness of 0.25 μm on the first metal substrate of single crystal Cu; providing a second metal substrate of polycrystalline Cu, on the first metal substrate of polycrystalline Cu Sputtering a 0.25 μm thick Sn second solder metal layer on the crystal Cu second metal substrate;
[0048] Step 2: coating flux on the surfaces of the first Sn solder metal layer and the Sn second solder metal layer;
[0049] Step 3: Aligning the first Sn solder metal layer and the Sn second solder metal layer, and placing them in contact to form an assembly;
[0050] Step 4: Heating the assembly formed in Step 3 to 260°C for brazing reflow, while applying a certain DC current so...
Embodiment 2
[0054] Such as image 3 , Figure 4 with Figure 5 Shown, the preparation method of intermetallic compound thin film of the present invention can be realized by following specific processing steps:
[0055] Step 1: providing a polycrystalline Ni first metal substrate, vapor-depositing a 0.5 μm thick Sn first solder metal layer on the polycrystalline Ni first metal substrate; providing a polycrystalline Ni second metal substrate;
[0056] Step 2: coating flux on the surface of the Sn first solder metal layer and the polycrystalline Ni second metal substrate;
[0057] Step 3: aligning the first Sn solder metal layer and the second polycrystalline Ni metal substrate, and placing them in contact to form an assembly;
[0058] Step 4: Heating the assembly formed in Step 3 to 260°C for brazing reflow, while applying a certain DC current so that the current density passing through the polycrystalline Ni first metal substrate is 0.75×10 4 A / cm 2 , and the current direction is dire...
Embodiment 3
[0061] Such as figure 1 , figure 2 with Figure 5 Shown, the preparation method of intermetallic compound thin film of the present invention can be realized by following specific processing steps:
[0062] Step 1: Provide a single crystal Cu first metal substrate, electroplate a 10 μm thick Sn-Cu first solder metal layer on the single crystal Cu first metal substrate; provide a polycrystalline Cu second metal substrate, and Electroplating a 10 μm thick Sn-Cu second solder metal layer on the Cu second metal substrate;
[0063] Step 2: Coating flux on the surfaces of the first Sn-Cu solder metal layer and the Sn-Cu second solder metal layer;
[0064] Step 3: aligning the Sn-Cu first solder metal layer and the Sn-Cu second solder metal layer, and placing them in contact to form an assembly;
[0065] Step 4: Perform brazing reflow on the assembly formed in Step 3 at 260°C, and apply a certain DC current at the same time, so that the current density passing through the first m...
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