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Light emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as failure of light-emitting diodes, and achieve the effects of improving crystal quality, reducing aggregation, and preventing failures

Active Publication Date: 2015-05-27
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of light-emitting diode failure in the prior art, the embodiment of the present invention provides a light-emitting diode epitaxial wafer and its preparation method

Method used

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  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof

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Embodiment 1

[0034] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 , the epitaxial wafer includes a substrate 1, and a buffer layer 2, an N-type layer 3, a stress release layer 4, a first current spreading layer 5, a multi-quantum well layer 6, and a second current spreading layer stacked on the substrate 1 in sequence. 7 and P-type layer 8.

[0035] In this embodiment, the first current spreading layer 5 includes several alternately grown Al x Ga 1-x N layer 51 and In y Ga 1-y N layer 52, and Al in the first current spreading layer 5 x Ga 1-x N layer 51 and In y Ga 1-y The N layer 52 is all N-type doped. The second current spreading layer 7 includes several alternately grown Al x Ga 1-x N layer 71 and In y Ga 1-y N layer 72, and Al in the second current spreading layer 7 x Ga 1-x N layer 71 and In y Ga 1-y None of the N layers 72 are doped. Wherein, 0

[0036] In an implementation of this embodiment, the A...

Embodiment 2

[0098] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer, see Figure 4 , the preparation method comprises:

[0099] Step 201: growing a buffer layer on a substrate.

[0100] In practical application, the Metal-Organic Chemical Vapor Deposition (MOCVD) method is adopted, trimethyl (or triethyl) gallium is used as gallium source, high-purity NH3 is used as nitrogen source, trimethyl Indium is used as an indium source, trimethylaluminum is used as an aluminum source, silane is used for N-type doping, and magnesiumocene is used for P-type doping.

[0101] Specifically, the substrate may be a sapphire substrate.

[0102] Specifically, the buffer layer may include a low-temperature buffer layer, a three-dimensional 3D layer, a merged layer, and a high-temperature buffer layer. The low-temperature buffer layer, three-dimensional 3D layer, merged layer, and high-temperature buffer layer are all GaN layers. The growth tem...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a buffering layer, an N-type layer, a stress release layer, a multi-quantum-well layer and a P-type layer which are stacked on the substrate in sequence, further comprises a first current extending layer stacked between the stress release layer and the multi-quantum-well layer, and a second current extending layer stacked between the multi-quantum-well layer and the P-type layer, wherein each of the first current extending layer and the second current extending layer comprises a plurality of AlxGa(1-x)N layers and InyGa(1-y)N layers which grow alternately, wherein x is greater than 0 and smaller than 1, and y is greater than or equal to 0 and smaller than 1; the AlxGa(1-x)N layers and the InyGa(1-y)N layers in the first current extending layer are doped with N types, and the AlxGa(1-x)N layers and the InyGa(1-y)N layers in the second current extending layer are not doped. The light emitting diode epitaxial wafer can prevent a light emitting diode from failing.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a semiconductor electronic component that can emit light. It has the advantages of high efficiency, long life, small size, and low power consumption. It can be used for indoor and outdoor lighting, screen display, backlight, etc. [0003] Epitaxial wafers are an important component in the manufacture of light-emitting diodes. The existing epitaxial wafer includes a sapphire substrate, and an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer sequentially stacked on the sapphire substrate. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prior art: [0005] There is a large lattice mismatch between ...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/0066H01L33/0075H01L33/06H01L33/14H01L33/32
Inventor 赵刚韩杰胡加辉魏世祯
Owner HC SEMITEK SUZHOU
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