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A kind of semiconductor memory device and its preparation method

A technology of storage devices and semiconductors, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems affecting device performance and exacerbation

Active Publication Date: 2017-11-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although there is a method for forming DDFG in the prior art, during the process of performing P-type ion implantation, the P-type ions will not only enter the N-type floating gate layer 103, but also enter the semiconductor substrate 101 , causing an impact on the semiconductor device, and the impact is aggravated with the continuous reduction of the size of the semiconductor device, which affects the performance of the device, so it is necessary to improve the preparation method of the double-doped floating gate in order to eliminate the above-mentioned problems

Method used

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  • A kind of semiconductor memory device and its preparation method
  • A kind of semiconductor memory device and its preparation method
  • A kind of semiconductor memory device and its preparation method

Examples

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Embodiment 1

[0048] Attached below Figure 2a-2h This example will be described.

[0049] First, step 201 is performed to provide a semiconductor substrate 201 on which a tunnel oxide layer (tunnel oxide) 202 , a floating gate layer 203 and a mask layer 204 are formed.

[0050] Specifically, please refer to Figure 2a , first provide a semiconductor substrate 201, wherein the semiconductor substrate 201 can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), germanium-on-insulator Silicon-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). In addition, an active region may be defined on the semiconductor substrate 201 . Other active devices may also be included on the active area, which are not marked in the shown figures for convenience.

[0051] The semiconductor substrate 201 can be selected as P-type, and a tunnel oxide layer is deposited on the semiconductor substrate 2...

Embodiment 2

[0098] The present invention also provides a semiconductor memory device, comprising:

[0099] A gate stack structure, including a tunnel oxide layer 202, a floating gate layer 203, an insulating isolation layer 206 and a control gate layer 207 deposited in sequence, is located on the semiconductor substrate 201;

[0100] Wherein, an ion-doped region is formed on the periphery of the floating gate layer 203 .

[0101] Further, the device further includes:

[0102] a shallow trench isolation structure located in the semiconductor substrate 201 on both sides of the floating gate structure;

[0103] The spacer is located on the sidewall of the floating gate structure.

[0104] Wherein, the floating gate layer 203 is an N-type floating gate, and the ion-doped region is a P-type.

[0105] In the present invention, in order to solve the problem in the prior art that dopant ions easily enter the semiconductor substrate during the formation of the double-doped floating gate and aff...

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Abstract

The present invention relates to a semiconductor storage device and a manufacturing method thereof. The method comprises: providing a semiconductor substrate on which a tunnel oxide layer and a floating gate layer are formed; forming an insulating Isolation layer, control gate layer, and first mask layer; pattern the first mask layer, the control gate layer, and the insulating isolation layer laterally to define critical dimensions of the floating gate and expose the floating gate gate layer; using the patterned first mask layer, control gate layer, and insulating spacer layer as a mask, ion implantation is performed on the floating gate layer, so as to form gates isolated from each other at both ends of the floating gate layer a first double-doped region, wherein part of the first double-doped region is located under the patterned insulating isolation layer; using the patterned first mask layer, the control gate layer and the The insulating isolation layer is used as a mask, and the doped floating gate layer and the tunnel oxide layer are etched to form a double-doped floating gate gate stack structure.

Description

technical field [0001] The present invention relates to a semiconductor memory device, in particular, the present invention relates to a semiconductor memory device and a manufacturing method thereof. Background technique [0002] With the rapid development of portable electronic devices (such as mobile phones, digital cameras, MP3 players, and PDAs, etc.), the requirements for data storage are getting higher and higher. Non-volatile memory has become the most important storage component in these devices because of its ability to save data even when power is off. Among them, because flash memory (flash memory) can achieve a high chip storage density, and no new materials are introduced , The manufacturing process is compatible, therefore, it can be more easily and reliably integrated into own digital and analog circuits. [0003] Floating gate structure memory is one of the important flash memory devices, and it is a mainstream memory type that is widely used and generally ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L27/11521H01L29/423H10B41/30H10B69/00
Inventor 宋化龙
Owner SEMICON MFG INT (SHANGHAI) CORP