Unlock instant, AI-driven research and patent intelligence for your innovation.

Fabrication method of backside process for improving igbt performance

A technology of backside process and fabrication method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of low activation efficiency, small improvement in device performance, and difficulty in meeting the requirements for the concentration and depth of the N-type buffer layer, etc. problems, to achieve the effect of reducing power consumption, optimizing performance, and increasing current density

Active Publication Date: 2018-02-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to realize the N-type buffer layer, the general technology is formed by ion implantation on the back and annealing of the furnace tube, but this technology has the problem of low activation efficiency, which makes it difficult to meet the requirements for the concentration and depth of the N-type buffer layer. The performance improvement is small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of backside process for improving igbt performance
  • Fabrication method of backside process for improving igbt performance
  • Fabrication method of backside process for improving igbt performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] In this embodiment, the advanced backside process manufacturing method for improving the performance of the trench (Trench) gate field stop type IGBT has the following steps:

[0053] (1) Perform the front process of the IGBT according to the conventional process

[0054] Prepare a piece of lightly doped substrate material with vapor phase doping or neutron irradiation, and select different doping concentrations or resistivities for the substrate material according to different withstand voltage requirements of IGBT devices. The front IGBT process is carried out on the substrate material. The main processes include: the production of the voltage-resistant ring and the field plate, the production of the Trench trench gate, the production of the conduction channel and the P-type collector layer, and the production of the emitter or source region. Fabrication, fabrication of front contact holes, metal, passivation layers (such as figure 1 shown).

[0055] (2) After the f...

Embodiment 2

[0073] In this embodiment, the advanced backside process manufacturing method for improving the performance of the Planar gate field termination type IGBT has the following steps:

[0074] (1) Perform the front process of the IGBT according to the conventional process

[0075] Prepare a piece of lightly doped substrate material with vapor phase doping or neutron irradiation, and select different doping concentrations or resistivities for the substrate material according to different withstand voltage requirements of IGBT devices. The front IGBT process is carried out on the substrate material. The main processes include: the production of the voltage-resistant ring and the field plate, the production of the planar gate, the production of the conduction channel and the P-type collector layer, and the production of the emitter or source region. , the production of front contact holes, metal, passivation layer (such as Figure 8 shown).

[0076] (2) After the front process is c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an advanced back side process fabrication method for improving IGBT performance. The method comprises the steps that: (1) after an IGBT front side process is completed, the backside of a wafer is thinned, and then donor impurity ions are implanted into the back side of the wafer; (2) laser annealing is conducted to the back side of the wafer to activate the donor impurity ions implanted in the back side, so that an N type buffer layer serving as a field stop is formed; (3) acceptor impurity ions are implanted into the back side of the wafer; (4) laser annealing is conducted to the back side of the wafer to activate the acceptor impurity ions implanted in the back side, so that a P type collector layer serving as a collector is formed. By means of the method, the better 'figure of merit' matching between the pressure endurance and pressure drop breakover of an IGBT is achieved, and due to the fact that the electric current density of the IGBT is increased, the device dimension of the IGBT can be decreased correspondingly, and it is achieved that the cost of the IGBT is reduced.

Description

technical field [0001] The invention relates to a preparation process of an IGBT (insulated gate bipolar transistor), in particular to a backside process preparation method for improving the performance of the IGBT. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is on the basis of VDMOS, adding a P-type thin layer on the back of its high-voltage N-base (N-type substrate), which introduces a conductance modulation effect, thereby greatly improving the performance of the device. current handling capability. Such IGBTs are called NPT-type IGBTs, that is, non-punch-through IGBTs. [0003] For NPT type IGBT (Insulated Gate Bipolar Transistor), in order to achieve high withstand voltage requirements, a certain thickness of low-concentration N base region is required, and the low concentration of N-base determines a certain conduction voltage drop, and the performance of the device is affected by limit. In order to solve this contradiction, an N-type buff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L21/265
CPCH01L21/265H01L21/268H01L29/66325
Inventor 李娜马彪斯海国
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP