Semi-insulating GaN extension structure

Abstract

The invention provides a semi-insulating GaN extension structure. The semi-insulating GaN extension structure comprises a silicon base layer, a buffer layer and a GaN layer and is characterized in that one layer of ALyGa1-yN which is constant in molar content and composed of an Al component is inserted between the buffer layer and the GaN layer, wherein the y is smaller than 1 and larger than 0. According to the semi-insulating GaN extension structure, the crystalline quality and the surface topography of semi-insulating GaN are improved, the growth technics is optimized, the growth cost is lowered, and the yield of products is improved. Moreover, a semi-insulating GaN-based high electronic mobility crystal (HEMTs) has the advantages that the electronic mobility is higher, and the high power density is larger.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semi-insulating GaN epitaxial structure grown on a Si substrate. Background technique [0002] GaN has the characteristics of large direct band gap (3.4ev), high thermal conductivity, and high electron saturation drift velocity, so it has become a research hotspot in the field of semiconductor technology. In particular, GaN-based high electron mobility field-effect transistors (HEMTs) are a new class of electronic devices based on nitride heterostructures. The device has excellent characteristics of high frequency and high power, and is widely used in information transmission and reception, energy conversion and other fields such as wireless communication base stations and power electronic devices. [0003] Due to the high breakdown voltage of AlGaN / GaN heterostructure, high concentration two-dimensional electron gas (2DEG) can be generated due to polarization, and high...

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Problems solved by technology

However, using the AlN buffer layer method, the surface of the thick-film GaN epitaxial layer also has cracks, and the modified method cannot effectively prevent the diffusion of Si atoms, so it is difficult to further improve the quality of GaN crystals

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