Semiconductor light emitting device and manufacturing method thereof

A technology of light-emitting devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low incorporation efficiency of In components, weakened quantum well tilt, low growth temperature, etc.

Active Publication Date: 2018-05-08
扬州德豪润达光电有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Chinese invention patent application with publication number 102449737A discloses a method for growing III-nitride thin films on non-polar or semi-polar surfaces to reduce the polarization charges in quantum wells; but in this method, The quantum wells in the non-polar or semi-polar plane have very few polarized charges, the polarization field is small, and the quantum well energy band tilt is weakened. Therefore, to achieve the same wavelength, more In components need to be contained, while in The incorporation efficiency of In components on the nonpolar and semipolar surfaces is low, requiring lower growth temperatures, which will deteriorate the crystal quality of quantum wells

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  • Semiconductor light emitting device and manufacturing method thereof
  • Semiconductor light emitting device and manufacturing method thereof
  • Semiconductor light emitting device and manufacturing method thereof

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Embodiment Construction

[0033] The semiconductor light-emitting device of the present invention comprises a substrate, a crystalline layer sequentially formed on the substrate, a gallium nitride buffer layer, an N-type gallium nitride layer, a low-temperature gallium nitride layer, a stress release layer, a transition layer, and a multi-quantum well layer and the P-type gallium nitride layer, the N electrode and the P electrode respectively form ohmic contacts with the N-type gallium nitride layer and the P-type gallium nitride layer through a micro-alloy process. The substrate of the present invention can be a commonly used substrate for the growth of gallium nitride epitaxial materials such as sapphire, silicon carbide, silicon, and homogeneous gallium nitride. The crystallization layer, the gallium nitride buffer layer, and the n-type gallium nitride layer are grown and formed using traditional process conditions.

[0034]In the invention, a low-temperature gallium nitride layer is grown on the N-...

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Abstract

Semiconductor light-emitting device and its preparation method, the semiconductor light-emitting device includes a substrate, a crystalline layer formed on the substrate, a gallium nitride buffer layer, an N-type gallium nitride layer, a transition layer, a multi-quantum well layer and a P-type gallium nitride layer; also includes a low-temperature gallium nitride layer, the low-temperature gallium nitride layer is formed on the N-type gallium nitride layer, and several pits are formed thereon; a stress release layer, the thickness of the stress release layer is less than 100nm and is sequentially formed at a low temperature 1 to K layers of Inx(k)Ga1-x(k)N on the gallium nitride layer are formed, wherein, the thickness dk of the k-th layer of Inx(k)Ga1-x(k)N is smaller than the k-1th layer of Inx( k-1)Ga1-x(k-1)N thickness dk-1, and x(k)>x(k-1), k=1,...,K, K≤5; P-type gallium nitride layer Cover pits. The present invention adjusts the number of layers and total thickness of InGaN in the stress release layer according to the composition of indium in the quantum well, so that the composition of indium in each layer of InGaN increases gradually from the bottom layer to the surface, and the thickness decreases gradually, so as to achieve the purpose of gradually releasing stress.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting devices, and in particular relates to a Group III nitride semiconductor device and a preparation method thereof. Background technique [0002] The emergence of semiconductor light-emitting devices has brought light sources that can cover the visible spectrum and have higher luminous efficiency and solid-state stability. Semiconductor light emitting devices, such as light emitting diodes (LEDs) or laser diodes, have been widely used in many fields. Light emitting diodes or laser diodes generally comprise nitride semiconductor layers fabricated by epitaxial processes on a microelectronic substrate, which may be gallium arsenide, gallium phosphide, silicon carbide and / or sapphire, and on the substrate. Visible light-emitting diodes based on group III nitride semiconductors have been widely used in the fields of indoor and outdoor color display, backlight and lighting in recent y...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/32H01L33/00
Inventor 王冬雷梅劲陈刚毅
Owner 扬州德豪润达光电有限公司
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