ZnO/ZnFe2O4 composite sensitive material, preparation method thereof and application of ZnO/ZnFe2O4 composite sensitive material in acetone gas sensor

A gas sensor, composite sensitive technology, applied in the application of acetone gas sensor, ZnO/ZnFe2O4 composite sensitive material field, can solve the problems of lengthy reaction process, harsh experimental conditions, cumbersome operating procedures, etc.

Active Publication Date: 2015-07-01
JILIN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the above-mentioned synthetic methods have many serious shortcomings in practical applications, such as cumbersome operating procedures, lengthy reaction process, large energy consumption and harsh experimental conditions.
These deficiencies greatly restrict their application and development

Method used

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  • ZnO/ZnFe2O4 composite sensitive material, preparation method thereof and application of ZnO/ZnFe2O4 composite sensitive material in acetone gas sensor
  • ZnO/ZnFe2O4 composite sensitive material, preparation method thereof and application of ZnO/ZnFe2O4 composite sensitive material in acetone gas sensor
  • ZnO/ZnFe2O4 composite sensitive material, preparation method thereof and application of ZnO/ZnFe2O4 composite sensitive material in acetone gas sensor

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Embodiment 1

[0043] With ZnO / ZnFe 2 o 4 The heterogeneous structure is a sensitive material to make an acetone gas sensor, and the specific method is as follows:

[0044] ①Add 1.1g Zn(CH 3 COO) 2 2H 2 O and 0.0588g Na 3 C 6 h 5 o 7 2H 2 O was sequentially added to 200mL deionized water, kept stirring to make it fully dissolved, then measured 6mL ammonia water (30wt%) and added to the above solution, and kept stirring for 5min;

[0045] ② Transfer the obtained clear solution to a three-necked flask, and use microwave to heat the reaction solution to 90°C, set the heating time to 40min, and set the heating power to 300W;

[0046] ③ After the reaction, the microwave heating system automatically stops heating. After the reaction system is naturally cooled to room temperature, the three-necked flask is taken out, and the obtained white precipitate is alternately centrifuged and washed 6 times with deionized water and ethanol to wash off the remaining residue in the reaction solution. ...

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Abstract

The invention belongs to the technical field of metal-oxide gas sensors, and particularly relates to design and synthesis of a composite sensitive material ZnO / ZnFe2O4, and an application of the composite sensitive material ZnO / ZnFe2O4 in an acetone gas sensor. In the preparation and preparation processes of the sensitive material, ZnO hollow microspheres are successfully synthesized first by adopting a microwave heating technology, and then a layer of ZnFe2O4 nanosheets grow on the surfaces of the ZnO hollow microspheres by adopting an epitaxial growth method. The whole synthesis process is simple, highly-efficient, energy-saving and suitable for large-scale production. Compared with ZnO hollow microspheres with a single component, the ZnO gas sensor modified by the ZnFe2O4 nanosheets shows more excellent gas sensitivity to acetone. In addition, the gas sensor of this type is small in size, and low in cost, so that the gas sensor based on the ZnO / ZnFe2O4 heterostructure is more applicable to monitoring acetone gas.

Description

technical field [0001] The invention belongs to the technical field of metal oxide gas sensors, in particular to ZnO / ZnFe 2 o 4 Composite sensitive material, preparation method and application in acetone gas sensor. Background technique [0002] With the continuous innovation of sensitive materials, various gas-sensitive materials have been developed successively. Among many gas-sensing materials, metal oxide semiconductors are considered to be the most promising gas-sensing materials due to their high sensitivity, low preparation cost, non-toxic environmental protection, and easy integration. Therefore, in recent years, metal oxides have received extensive attention and been vigorously developed. According to the type of majority carriers, metal oxide semiconductors can be divided into n-type sensitive materials (such as In 2 o 3 , SnO 2 , ZnO, Fe 2 o 3 、WO 3 etc.) and p-type sensitive materials (such as NiO, Co 3 o 4 , CuO, etc.). Although gas sensors based on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B81B1/00B81C99/00
Inventor 卢革宇李晓伟孙鹏刘凤敏孙彦峰
Owner JILIN UNIV
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