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Solar cell

A technology of solar cells and sub-cells, which is applied in the field of photoelectric components and solar cells, can solve the problems of inefficient regulation, degradation of battery performance, and inability to achieve high n-type doping concentration, so as to reduce lateral expansion resistance and increase current carrying Sub-lifetime, the effect of reducing interfacial recombination

Inactive Publication Date: 2015-07-15
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the amphoteric substitution of Si to a certain doping concentration, it will be saturated so that it cannot reach a high n-type doping concentration.
Therefore, the Si-doped window layer cannot efficiently control the barrier of the heterojunction interface, which will cause additional resistance caused by electrons crossing the barrier in the double-junction battery, resulting in a decrease in battery performance.

Method used

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Embodiment 1

[0025] refer to figure 1 , is a schematic diagram of the solar structure provided in this embodiment, the solar cell includes a bottom electrode 110, a substrate 160, a second sub-cell 130, a first tunnel junction 140, a first sub-cell 150, and a contact layer arranged in sequence from bottom to top 170 and the top electrode 120, wherein the energy band system of the second sub-cell is smaller than that of the first sub-cell, and the lattice constant of the first sub-cell 150 is matched with the GaAs lattice. In this embodiment, we take the first sub-cell 150 made of GaInP material as an example for illustration. Of course, in other embodiments, the first sub-cell may also be a GaAs solar cell.

[0026] In this embodiment, the material of the substrate 160 is P-type doped GaAs, wherein the P-type dopant source is Be. In order to improve the growth quality of the second sub-cell 130 , a buffer layer 180 is provided on the substrate 160 , and the material of the buffer layer 18...

Embodiment 2

[0031] refer to figure 2 , is a schematic diagram of the solar structure provided in this embodiment, the solar cell includes a bottom electrode 210, a substrate 230, a buffer layer 240, a first sub-cell 250, a contact layer 260, and a top electrode 220 arranged sequentially from bottom to top, wherein, The lattice constant of the first sub-cell 250 is matched with the GaAs lattice. In this embodiment, we take the first sub-cell 250 of GaInP material as an example for illustration. Of course, in other embodiments, the first sub-cell 250 can also choose GaAs solar cells.

[0032]In this embodiment, the material of the substrate 230 is P-type doped GaAs, wherein the P-type dopant source is Be. In order to improve the growth quality of the first sub-cell 250 , a buffer layer 240 is provided on the substrate 230 , and the material of the buffer layer 240 is P-type GaAs.

[0033] Further, the first sub-cell 250 includes a first back field 251 , a first base 252 , a first emitter...

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Abstract

The invention provides a solar cell, which comprises a top electrode, a bottom electrode and a first sub cell arranged between the top electrode and the bottom electrode, wherein a contact layer is arranged between the top electrode and the first sub cell; a first window layer arranged on the first sub cell is contacted with the contact layer; and the first window layer adopts tellurium to serve as an n-type dopant. According to the solar cell provided by the invention, through adopting tellurium to serve as the n-type doping source for the first window layer, the first window layer has a high n-type doping concentration, diffusion of a hole can be effectively prevented, interface recombination is reduced, and the service life of carriers is improved; and electrons can effectively pass across a potential barrier for realizing electron collection, lateral spreading resistance is reduced, and the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the field of photoelectric elements, in particular to the field of solar cells. Background technique [0002] Environmental and energy requirements make new energy technologies, including solar energy efficient power generation, more and more important. As a forward-looking and strategic new clean energy technology that supports the sustainable development of my country's national economy, efficient solar power generation technology is listed as a key support and priority development direction in the national medium and long-term scientific and technological development plan. Compared with silicon solar cells, multi-junction III-V compound semiconductor solar cells use a variety of semiconductor materials with different bandgap widths to absorb the part of sunlight that matches their bandgap widths, thereby achieving broad-spectrum absorption of sunlight. The efficiency of double-junction solar cells has exceeded 30%, and the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/0687H01L31/0693
CPCY02E10/544
Inventor 代盼陆书龙吴渊渊谭明杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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