Method of cutting high-hardness material with multi-wire saw

Abstract

In a method of cutting a high-hardness material with a multi-wire saw, an ingot of the high-hardness material is sliced into a plurality of wafers by cutting the ingot at multiple points simultaneously with the multi-wire saw. The method comprises repeating a run cycle of reciprocating motion of a wire of the multi-wire saw so that the relationships (1) c1≧20, given C1=b / a and (2) 0.35≰c2≰1.55, given c2=d / a are satisfied, where a is a maximum total contact length defined as a sum of the lengths of the ingot as projected onto multiple cut points when projecting the ingot onto the wire in a direction in which the ingot is going to be cut, b is a continuous travel distance of the wire, and d is a length of the wire newly fed in each said run cycle.

Description

technical field [0001] The present invention relates to a method for cutting high hardness materials using a multi-wire saw. Background technique [0002] In recent years, silicon carbide semiconductors have attracted attention as new semiconductor materials. Silicon carbide semiconductors have greater insulation breakdown electric field, electron saturation drift rate and thermal conductivity than silicon semiconductors. Therefore, research and development of power devices capable of operating at a higher temperature and at a higher speed than conventional silicon devices using silicon carbide semiconductors are actively being carried out. Among them, since electric motors used in electric two-wheeled vehicles, electric vehicles, and hybrid vehicles are controlled by AC drives or inverters, attention has been paid to the development of high-efficiency switching elements used in such applications. . In order to realize such a power device, a single crystal silicon carbide...

AI Technical Summary

Problems solved by technology

However, compared with the mass-produced and widely used silicon wafers, it is not easy to cut high-hardness materials with high processing accuracy and finish them into wafers with high flatness.

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