Production method and application of half-metallic Heusler alloy Co2FeAl nanowire

A nanowire and semi-metal technology, which is applied in the preparation of semi-metal Heusler alloy Co2FeAl nanowires, and the field of semi-metal Heusler alloy materials, can solve the problem that the parameter conditions are difficult to control, the process conditions are difficult to control, and the process is cumbersome. and other problems, to achieve the effect of good structure, low cost and good repeatability

Inactive Publication Date: 2015-07-29
HUBEI UNIV
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Problems solved by technology

However, this method has the disadvantages of high cost, cumbersome process and difficult control of process conditions.
Moreover, the use of electron beam exposure and other micro-processing methods to process the prepared CFA film into CFA nanowires also has the disadvantages of complex process, difficult control of parameter conditions, and high cost.

Method used

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  • Production method and application of half-metallic Heusler alloy Co2FeAl nanowire
  • Production method and application of half-metallic Heusler alloy Co2FeAl nanowire
  • Production method and application of half-metallic Heusler alloy Co2FeAl nanowire

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Embodiment

[0033] A kind of semimetal Hasler alloy Co of the present embodiment 2 The preparation method of FeAl nanowire, its concrete steps are as follows:

[0034] (1) Weigh 2.855g (12mmol) of CoCl with a purity of 99% 2 ·6H 2 O, 2.424g (6mmol) of 99% Fe(NO 3 ) 3 9H 2 O, 1.999g (3mmol) Al with a purity of 98% 2 (SO 4 ) 3 18H 2 O, three kinds of raw materials are reserved;

[0035] (2) Dissolve the weighed cobalt chloride, ferric nitrate and aluminum sulfate raw materials described in step (1) in 900ml deionized water to make a uniform and transparent mixed solution, and keep stirring with a glass rod;

[0036] (3) Weigh 2.4g of NaOH solid particles and dissolve them in 100ml of deionized water to prepare a NaOH solution, then add the NaOH solution dropwise to the continuously stirring uniform transparent mixed solution described in step (2), as With the addition of NaOH solution, the transparent mixed solution gradually becomes turbid, and turbidity appears in the solution a...

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Abstract

The invention provides a production method of a half-metallic Heusler alloy Co2FeAl nanowire. The production method comprises obtaining Co2FeAl Heusler alloy particles through production by a wet chemical method and growing into the Co2FeAl Heusler alloy nanowire in a vacuum tube furnace under the protection of the 99.99% purity of argon gas through the alloy particles. According to the Co2FeAl nanowire produced by the production method, the spin polarization rate is high, the Curie temperature is high, the high magnetoresistance effect can be obtained when the Co2FeAl nanowire obtained through production is applied to a spin valve multilayer-membrane structure and the spinning electron detection, and the use requirements of high sensitivity and storage density of magnetic sensors and magnetic memories are met. According to the production method of the half-metallic Heusler alloy Co2FeAl nanowire, large instruments and devices are not required, complicated process parameters which are difficult to be accurately controlled do not need to be controlled, and accordingly the production process is simple, the cost is low, the efficiency is high, the Co2FeAl nanowire obtained through production is good in structure and good in repetition, and the mass production is convenient.

Description

technical field [0001] The invention belongs to the technical field of magnetic materials. Specifically, the present invention relates to a semi-metallic Heusler (Hassler) alloy material. More specifically, the present invention relates to a semi-metallic Heusler alloy Co 2 Preparation method and application of FeAl nanowire. Background technique [0002] Electrons have two intrinsic properties of charge and spin. Previous studies only involved the use of the charge characteristics of electrons. In recent years, with the development of spintronics, it has been found that dilute magnetic semiconductors can simultaneously use the charge and spin of electrons. Spin to process and store information. But the key problem is the low efficiency of spin-polarized electron injection into semiconductor materials. Therefore, from the perspective of materials researchers, it is particularly important to search for materials with such a single spin or materials with high spin polarizabi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/12B22F9/16B32B15/04B82Y30/00B82Y40/00
Inventor 康泽威杨辅军姚军李纪辉
Owner HUBEI UNIV
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