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Application of a porous low dielectric polyimide film on pi cover film

A technology of polyimide film and polyimide matrix, applied in the field of PI cover film manufacturing, can solve the problems of reducing the dielectric constant of polyimide, increasing production costs and difficulty in process control, etc.

Active Publication Date: 2017-10-24
无锡顺铉光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can effectively reduce the dielectric constant of polyimide, but the introduction of new monomers and porogens increases the difficulty of production cost and process control

Method used

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  • Application of a porous low dielectric polyimide film on pi cover film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Preparation of calcium carbonate suspension

[0023] Adopt Shanxi Ruicheng Warner Nano Material Co., Ltd. to produce 4.5kg of nano-calcium carbonate with a particle size of 100nm, add the aprotic solvent N, N'-dimethylacetamide (DMAc), under the condition of 40kHz ultrasonic dispersion, stirring speed 2000r / min, fully stirred for 30min to make a stable suspension, ensuring that the mass concentration of the calcium carbonate suspension is 5%.

[0024] (2) Preparation of polyamic acid composite solution

[0025] Add the suspension obtained above into the polyamic acid polymerization reactor, and add a sufficient amount of solvent. Control the temperature at 40°C, add 20kg of ODA, and carry out mechanical stirring. After it is completely dissolved, control the temperature at 60°C, add 21.8kg of PMDA with an equal molar ratio to diamine in batches, and keep stirring to make the two The amine and dianhydride fully react to form a polyamic acid composite solution with ...

Embodiment 2

[0031] (1) Preparation of calcium carbonate and silica suspension

[0032] Adopting Shanxi Ruicheng Warner Nano Material Co., Ltd. to produce 2.5kg of nano-calcium carbonate with a particle diameter of 40nm and 4.5kg of nano-silicon dioxide (produced by West Asia Reagent) with a particle diameter of 40nm, adding the aprotic solvent N, N'-di In methylacetamide (DMAc), under the condition of 60kHz ultrasonic dispersion, the stirring speed is 3000r / min and fully stirred for 60min to make a stable suspension, and the mass concentration of nano-calcium carbonate and silicon dioxide is guaranteed to be 20%.

[0033] (2) Preparation of polyamic acid composite solution

[0034] Add the suspension obtained above into the polyamic acid polymerization reactor, add a sufficient amount of solvent, control the temperature at 10°C, add 20kg of ODA, and carry out mechanical stirring. After it is completely dissolved, control the temperature at 50°C, divide Add 21.8 kg of PMDA in an equimolar...

Embodiment 3

[0040] (1) Preparation of calcium carbonate and silica suspension

[0041] The particle diameter that adopts Shanxi Ruicheng Warner Nano Material Co., Ltd. to produce is 20nm nano-calcium carbonate 1kg, and 10kg particle diameter is the nano-silicon dioxide (produced by West Asia Reagent) of 100nm, add 160kg aprotic solvent N, N'-dimethyl In acetamide (DMAc), under the condition of 100kHz ultrasonic dispersion, the stirring speed is 2000r / min, and the stirring speed is 2000r / min, and it is fully stirred for 60min to make a stable suspension, and the mass concentration of calcium carbonate and silicon dioxide is guaranteed to be 15%.

[0042] (2) Preparation of polyamic acid composite solution

[0043] Add the suspension obtained above into the polyamic acid polymerization reactor, and add a sufficient amount of solvent. Control the temperature at 25°C, add 16kg of ODA and 4kg of MDA, and carry out mechanical stirring. After they are completely dissolved, control the temperatu...

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Abstract

The invention belongs to the field of PI cover film manufacturing, and provides an application of a porous low-dielectric polyimide film on a PI cover film. The film is composed of a polyimide matrix and a reinforcing filler, wherein the polyimide matrix The mass fraction is 80-100wt%, the reinforcing filler mass fraction is 0%-20wt%, and has micropores with a pore size of ≤2μm. Tests show that the minimum dielectric constant of the porous low-dielectric polyimide film provided by the invention can reach 2.6, while the tensile strength still maintains a relatively high tensile strength of 160 MPa. The insulation resistance of the PI covering film made of the porous low-dielectric polyimide film as the base material is 1.0×1011,300. C. No air bubbles or delamination occurred in 10 seconds, and the peel strength was 1.3-1.6 Kfg / cm, which indicated that the film provided by the present invention had excellent properties.

Description

technical field [0001] The invention belongs to the field of PI covering film manufacture, and relates to the application of a porous low-dielectric polyimide film on the PI covering film. Background technique [0002] PI cover film is widely used more and more because of its excellent bending resistance, light weight and thin thickness. The PI cover film is mainly composed of a PI film (polyimide film), an adhesive layer and a laminating paper, among which the PI film forms the basis of the cover film. In recent years, with the continuous development of electronic products, the functional integration of products is higher, the circuit board materials are thinner, thinner and more layers, and the requirements for insulating materials with low dielectric constant are also higher. At present, the materials used for insulating films are mainly polyimide and polyester materials. Since the initial decomposition temperature of polyimide is generally around 500°C, it can withstan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J9/26C08J5/18C08L79/08C08K3/36C08G73/10
Inventor 宋艳江吕亮刘顺祯
Owner 无锡顺铉光电科技有限公司