Transparent conductive oxide film based on TiN interlayer doping
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHEJIANG UNIV
- Publication Date
- 2015-08-12
Smart Images
Figure 1
Abstract
Description
technical field
[0001] The invention relates to the technical field of photoelectric materials, in particular to a transparent conductive oxide film based on TiN interlayer doping. Background technique
[0002] With the development of social science, the demand for functional materials is increasingly urgent. New functional materials have become the key to the development of new technologies and industries. In recent years, surface plasmon technology has received more and more attention. Noble metal materials such as gold and silver have been widely used in optoelectronic material devices such as surface plasmons because of their low ohmic loss and high electrical conductivity.
[0003] However, precious metal materials such as gold and silver still have certain limitations. Compared with electrical properties, their optical properties are poor, especially in the near-infrared band (wavelength range between 1 μm and 3 μm), and the optical loss is very high. , the optical p...