Preparation technology for high-temperature electrothermal film

A preparation process, electric heating film technology, applied in the direction of electric heating devices, ohmic resistance heating, electrical components, etc., can solve the problems of low resistance, high hardness, high melting point, etc., and achieve high heat conversion rate, compact structure, and stable crystallization performance Effect

Inactive Publication Date: 2015-08-12
SOUTHWEST UNIVERSITY FOR NATIONALITIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with traditional heating materials, it has the characteristics of high melting point, high hardness, low resistance, high thermal efficiency, and good chemical stability. The research on low-temperature electrothermal film has been quite mature, but the research on high-temperature electrothermal film, especially the research on thermal conversion Therefore, it is of great significance to find an easy synthesis method to further study the various properties of the electrothermal film.

Method used

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  • Preparation technology for high-temperature electrothermal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] S1. Take 100ml of alcohol and place it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0014] S2. After the solution obtained in step S1 was left to stand for 2 hours, use a glue homogenizer to uniformly coat 15 layers of film on the quartz substrate at a speed of 5.0 kr / min. After the film coating is completed, cool down to room temperature naturally to deposit colloid;

[0015] S3. Place the quartz substrate obtained in step S2 in a high-temperature atmosphere furnace at 450° C. for sintering for 4 hours to obtain a finished product.

Embodiment 2

[0017] Take 100ml of alcohol and place it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0018] S2. After the solution obtained in step S1 was left to stand for 2 hours, use a glue homogenizer to uniformly coat 20 layers of film on the quartz substrate at a speed of 5.0 kr / min. After the film coating is completed, naturally cool down to room temperature and deposit the colloid;

[0019] S3. Place the quartz substrate obtained in step S2 in a high-temperature atmosphere furnace at 450° C. for sintering for 4 hours to obtain a finished product.

Embodiment 3

[0021] Take 100ml of alcohol and place it in a conical flask, heat it to 80°C, add 17.529g of tin tetrachloride and 0.57g of antimony trichloride to seal it, and stir at a constant temperature of 80°C for one hour;

[0022] S2. After the solution obtained in step S1 was left to stand for 2 hours, use a glue homogenizer to uniformly coat 18 layers of film on the quartz substrate at a speed of 5.0 kr / min. After the film coating is completed, cool down to room temperature naturally to deposit the colloid;

[0023] S3. Place the quartz substrate obtained in step S2 in a high-temperature atmosphere furnace at 450° C. for sintering for 4 hours to obtain a finished product.

[0024] After testing, the XRD spectrum of the film structure obtained in Examples 1-3 at a temperature of 450°C is as follows: figure 1 shown.

[0025] The present invention can prepare thin films under lower temperature conditions, can accurately control the amount of dopant, and can prepare larger area SnO 2...

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Abstract

The invention discloses a preparation technology for high-temperature electrothermal films. The preparation technology comprises the following steps: taking 100 ml alcohol in a conical flask, heating the alcohol to 80 DEG C, adding 17.529 g stannic chloride and 0.57 g antimony butter, sealing the conical flask, stirring for an hour in 80 DEG C constant temperature; after standing for 2 hours, using a spin coater to coat 15-20 layers of films on a quartz substrate in a spin-coating manner at speed of 5.0 kr / min, after film-coating is completed, cooling to indoor temperature in natural air, depositing colloid; and putting the obtained quartz substrate in an atmosphere high-temperature furnace, and sintering in temperature of 450 DEG C for 4 hours to obtain a finished product. The electrothermal film prepared by the method is stable in performance, and high in heat conversion rate.

Description

technical field [0001] The invention relates to the field of high-temperature electrothermal film preparation technology, in particular to a high-temperature electrothermal film preparation process. Background technique [0002] Semiconductor Electroheafing Film (SEI-IF for short), also known as metal oxide electroheating film, is a kind of electric heating film with great application potential. It has self-limiting temperature characteristics, which can ensure uniform temperature everywhere and avoid Temperature unevenness occurs. Become a safe "smart" heating material. Compared with traditional heating materials, it has the characteristics of high melting point, high hardness, low resistance, high thermal efficiency, and good chemical stability. The research on low-temperature electrothermal film has been quite mature, but the research on high-temperature electrothermal film, especially the research on thermal conversion Therefore, it is of great significance to find an ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/34
Inventor 徐敏
Owner SOUTHWEST UNIVERSITY FOR NATIONALITIES
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