PERC solar cell sintering method

A technology of solar cells and sintering methods, applied in the field of solar cells, can solve problems such as the formation of voids in the area of ​​silicon-aluminum alloys, and achieve the effects of reducing the proportion of aluminum-silicon voids, being easy to implement, and the method is simple and easy

Inactive Publication Date: 2015-09-02
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When PERC solar cells adopt the above-mentioned conventional sintering process suitable for all-aluminum back-fi

Method used

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  • PERC solar cell sintering method
  • PERC solar cell sintering method

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Embodiment 1

[0026] A PERC solar cell, the preparation method mainly includes the following steps: texturing, diffusion, back polishing, etching and impurity removal glass, depositing aluminum oxide or silicon oxide film on the back, depositing a silicon nitride protective film, and depositing silicon nitride on the front The solar cell can be obtained by antireflection layer, partial opening on the back, screen printing the metal paste on the front and back, and sintering.

[0027] Among them, screen printing front and back metal paste refers to printing metal electrodes (such as silver paste) and aluminum paste on the back, printing metal electrodes (such as silver paste) on the front and back, and then sintering. The sintering method is as follows: including heating and cooling Two steps, in which the heating step is generally divided into three stages: the first stage, from room temperature to about 300 ° C, its main function is to dry and drive the volatile organic compounds in the slu...

Embodiment 2

[0030] A PERC solar cell, its preparation method is the same as that of the first embodiment; its sintering method is also the same as that of the first embodiment. The difference is that in the sintering process, the heating steps are:

[0031] In the first stage, the heating rate during the process from room temperature to 300°C is 10°C / s;

[0032] In the second stage, the heating rate from about 300°C to about 670°C is 60°C / s;

[0033] In the third stage, the heating rate from about 670°C to the highest temperature (about 800°C) is 10°C / s.

[0034] Experiments have proved that the local contact area between aluminum and silicon should be the silicon aluminum alloy area without forming voids.

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Abstract

The invention discloses a PERC solar cell sintering method. The method includes a warming step and a cooling step. In the warming step, temperature is raised to 600 DEG C from 300 DEG C at a temperature rise rate of 30-90 DEG C/s. According to the invention, a comparatively high temperature rise rate is adopted, so that Al-Si balance is achieved quickly and diffusing amount and depth of Si to Al are reduced, and thus Al-Si cavity proportion is reduced. As the experiments prove, compared with the prior art, the Al-Si cavity proportion of a solar cell obtained by utilizing the method provided by the invention is reduced by over 60 percents and the battery efficiency is improved by 0.14-0.30 percent. An extraordinary technical effect is achieved.

Description

technical field [0001] The invention relates to a sintering method of a PERC solar cell, belonging to the technical field of solar cells. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. Solar power generation devices, also known as solar cells or photovoltaic cells, can directly convert solar energy into electrical energy. The principle of power generation is based on the photovoltaic effect of semiconductor PN junctions. With the development of science and technology, partial contact back passivation (PERC) solar cells have emerged, which is a newly developed high-efficiency solar cell and has attracted widespread attention in the industry. Its core is to cover the backlight surface of the silicon wafer with an aluminum oxide or silicon oxide film (5-100 nanometers) to passivate the surfac...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/186Y02E10/50Y02P70/50
Inventor 吴坚王栩生邢国强
Owner CSI CELLS CO LTD
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