Light-emitting diode P-type doped layer growth method
A technology of light-emitting diodes and doped layers, applied in electrical components, nanotechnology, circuits, etc., can solve the problems of poor photoelectric performance of LEDs, achieve the effect of improving photoelectric performance and reducing manufacturing costs
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[0026] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0027] The technical solutions of the present invention will be further described in detail below through specific embodiments and accompanying drawings.
[0028] An embodiment of the present invention provides a method for growing a P-type doped layer of a light-emitting diode, and the method may specifically include:
[0029] gro...
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