[0026] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0027] The technical solutions of the present invention will be further described in detail below through specific embodiments and accompanying drawings.
[0028] An embodiment of the present invention provides a method for growing a P-type doped layer of a light-emitting diode, and the method may specifically include:
[0029] growing a core layer on a substrate;
[0030] growing an undoped structural layer on the core layer;
[0031] growing an N-type doped layer on the undoped structural layer;
[0032] growing a quantum well light-emitting layer on the N-type doped layer;
[0033] growing a P-type doped layer on the quantum well light-emitting layer;
[0034] The P-type doped layer includes superlattice structures of aluminum gallium nitride (ALGaN) and aluminum nitride (ALN).
[0035] Specifically, in this embodiment, the substrate may be sapphire Al 2 O 3 , silicon Si or silicon carbide SiC, etc., the core layer, undoped structural layer, N-type doped layer, quantum well light-emitting layer can be gallium nitride GaN or the like. And various methods in the prior art can be used to grow the core layer, the undoped structural layer, the N-type doped layer and the quantum well light-emitting layer on the substrate, and the final growth of the P-type doped layer includes ALGaN and ALN and superlattice structures.
[0036] specific, figure 1 The above is a schematic flowchart of a method for growing a P-type doped layer of a light-emitting diode provided by an embodiment of the present invention, as shown in figure 1 As shown, the method includes:
[0037] Step 101 : growing low temperature P-type gallium nitride P-GaN on the quantum well light emitting layer.
[0038] Step 102 : growing P-type aluminum gallium nitride P-AlGaN on low temperature P-GaN.
[0039] Step 103: Grow high temperature P-GaN on P-AlGaN.
[0040] Step 104: Growing at least one pair of superlattice structures of ALGaN and ALN on high temperature P-GaN.
[0041] Step 105: Grow P-type Indium Gallium Nitride P-InGaN on the superlattice structure of ALGaN and ALN.
[0042] Low-temperature P-type gallium nitride P-GaN, P-type aluminum gallium nitride P-AlGaN, high-temperature P-GaN, at least one pair of ALGaN and ALN superlattice structure, P-type are grown on the surface of the quantum well light-emitting layer from bottom to top. Indium Gallium Nitride P-InGaN.
[0043] And wherein, growing the ALGaN and ALN superlattice structures includes: growing ALGaN and ALN sequentially from bottom to top.
[0044] Specifically, growing the first layer of ALGaN and the superlattice structure of ALN includes: growing a layer of ALGaN on high-temperature P-GaN, and then growing a layer of ALN on the generated ALGaN.
[0045] Based on the above, P-InGaN was grown on ALN.
[0046] Further, growing the second layer of ALGaN and the ALN superlattice structure includes: growing a layer of ALGaN on the ALN generated by the first layer, and then growing a layer of ALN on the generated ALGaN.
[0047] Based on the above, P-InGaN can be grown on ALN in the second layer ALGaN and ALN superlattice structure.
[0048] Superlattice structures of 1-10 layers of ALGaN and ALN can be grown in specific applications.
[0049] Among them, the content of AL in the superlattice structure of ALGaN and ALN is between 0.5%-15%, and the thickness of ALGaN in the superlattice structure of ALGaN and ALN is between 1nm-10nm, and the thickness of ALN is between 1nm- 15 nm, and the thickness of the superlattice structure of the ALGaN and ALN finally generated is between 2 nm and 50 nm.
[0050] In a specific application, the core layer is first grown on the substrate, then the undoped structural layer is grown, the N-type doped layer is further grown, the quantum well light-emitting layer is grown again, and finally the P-type doped layer in the embodiment of the present invention is grown Miscellaneous layers.
[0051] The method for growing a P-type doped layer of a light-emitting diode provided in this embodiment includes: growing a core layer on a substrate, growing an undoped structural layer on the core layer, and growing an N-type doped layer on the undoped structural layer, A quantum well light-emitting layer is grown on the N-type doping layer, and a P-type doping layer is grown on the quantum well light-emitting layer, wherein the P-type doping layer includes a superlattice structure of aluminum ALGaN and ALN. Since the superlattice structure of ALGaN and ALN is included in the P-type doped layer, it can effectively prevent the current from directly entering the epitaxial quantum well light-emitting layer, thereby effectively improving the optoelectronic performance of the LED. Further, the manufacturing cost can be effectively reduced.
[0052] The growth process of the P-type doped layer in the LED provided in the present invention will be described in detail below through three specific embodiments.
[0053] In the light-emitting diode P-type doped layer growth method provided in this embodiment, the epitaxial wafer is fabricated into a chip size of 16um*20um, the driving current is 20MA, and the current spreading layer is designed to have a total thickness of 15nm (ALGaN and ALN) 3 layers of superlattice structure.
[0054] The specific steps are:
[0055] Put the patterned sapphire substrate (Patterned Sapphire Substrate, referred to as: PSS) into the reaction chamber, at this stage, nitrogen (N 2 ): Hydrogen (H 2 ): Ammonia (NH) 3 ) with a flow ratio of (0:120:0) liter per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), and then the temperature of the reaction chamber is raised to 1080 ° C for a continuous period of time. 300 seconds, high temperature purification of PSS.
[0056] The temperature in the reaction chamber was lowered to 540°C. At this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The ratio of flow rate is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and a low-temperature GaN core layer with a thickness of 35 nm is grown at this time.
[0057] The temperature in the reaction chamber was raised to 1050 °C again, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and a high-temperature undoped gallium nitride U-GaN structure layer with a thickness of 1000 nm is grown.
[0058] The temperature in the reaction chamber was kept at 1050 °C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio of (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the N-type gallium nitride N-GaN doped layer with a thickness of 1000 nm is grown.
[0059] Reduce the temperature in the reaction time to between 750-880 ℃, at this stage, the N in the reaction chamber 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, the quantum well is grown at 760 °C, and the quantum barrier is grown at 860 °C, a total of 13 pairs of quantum well light-emitting layers.
[0060] The temperature in the reaction chamber was lowered to 740°C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and a low-temperature P-type gallium nitride P-GaN layer with a thickness of 20 nm is grown.
[0061] The temperature in the reaction chamber was raised to 950 °C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, and the P-type aluminum gallium nitride P-ALGaN layer is grown with a thickness of 20 nm.
[0062] The temperature in the reaction chamber was stabilized at 950 °C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the high temperature P-type gallium nitride P-GaN layer is grown with a thickness of 40 nm.
[0063] The temperature was stabilized at 950 °C, and the N in the reaction chamber at this stage was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, 2nm thick ALGaN is grown first, then 3nm thick ALN is grown, and three cycles (ALGaN and ALN) superlattice structure layers are alternately grown .
[0064] The temperature in the reaction chamber was controlled at 720°C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and a P-type indium gallium nitride P-InGaN layer is grown with a thickness of 3 nm.
[0065] The temperature in the reaction chamber was controlled at 710°C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio of (75:0:0) SLM, the pressure of the reaction chamber is controlled at 50 Torr, and the epitaxial wafer is annealed for 10 minutes to activate magnesium Mg.
[0066] Finally, using the chip technology to process, the photoelectric properties are the same as the effect of the chip with a current blocking layer, indicating that the superlattice layer of ALGaN and ALN plays the function of current expansion.
[0067] The method for growing a P-type doped layer of a light-emitting diode provided in this embodiment utilizes the superlattice of ALGaN and GaN as a function of current expansion, which achieves the purpose of reducing chip cost without affecting the photoelectric performance of secondary light.
[0068] In the light-emitting diode P-type doped layer growth method provided in this embodiment, the epitaxial wafer is fabricated into a chip size of 200um*350um, the driving current is 60MA, and the current spreading layer is designed to have a total thickness of 28nm (AlGaN and ALN) 4 layers of superlattice structure.
[0069] The specific steps are:
[0070] Put the patterned sapphire substrate (Patterned Sapphire Substrate, referred to as: PSS) into the reaction chamber, at this stage, nitrogen (N 2 ): Hydrogen (H 2 ): Ammonia (NH) 3 ) with a flow ratio of (0:120:0) liter per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), and then the temperature of the reaction chamber is raised to 1080 ° C for a continuous period of time. 300 seconds, high temperature purification of PSS.
[0071] The temperature in the reaction chamber was lowered to 540°C. At this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The ratio of flow rate is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and a low-temperature GaN core layer with a thickness of 35 nm is grown at this time.
[0072] The temperature in the reaction chamber was raised to 1050 °C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and the undoped GaN structure layer with a thickness of 1000 nm is grown.
[0073] Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the N-GaN layer with a thickness of 1000 nm is grown.
[0074] Control the temperature at 750-880°C, N 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, the quantum well is grown at 760 °C, and the quantum barrier is grown at 860 °C, a total of 13 pairs of quantum well light-emitting layers.
[0075] A P-type doped layer is grown on the quantum well light-emitting layer.
[0076] The temperature was controlled at 710 °C, and the N in the reaction chamber at this stage was 2 :H 2 : NH 3 The flow ratio is (75:0:0) SLM, the pressure of the reaction chamber is controlled at 50 Torr, and the epitaxial wafer is annealed for 10 minutes to activate Mg.
[0077] Finally, using the chip technology to process, the photoelectric properties are the same as the effect of the chip with a current blocking layer, indicating that the superlattice layer of ALGaN and ALN plays the function of current expansion.
[0078] Wherein, the specific steps of growing the P-type doped layer on the quantum well light-emitting layer are:
[0079] The temperature in the reaction chamber was lowered to 740°C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the low-temperature P-GaN layer is grown with a thickness of 20 nm.
[0080] The temperature in the reaction chamber was raised to 950 °C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, and the P-ALGaN layer is grown with a thickness of 20 nm.
[0081] The temperature in the reaction chamber was stabilized at 950 °C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the P-GaN layer is grown with a thickness of 40 nm.
[0082] The temperature in the reaction chamber was lowered to 820°C. At this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, and the Al is grown with a thickness of 4 nm. 0.095 In 0.005 Ga 0.9 N, and then grow ALN with a thickness of 3 nm for four cycles of alternate growth (Al 0.095 In 0.005 Ga 0.9 N and ALN) superlattice structured layers.
[0083] The temperature in the reaction chamber was controlled at 720 °C, N 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and a P-InGaN layer is grown with a thickness of 3 nm.
[0084] The method for growing a P-type doped layer of a light-emitting diode provided in this embodiment utilizes the superlattice of ALGaN and GaN as a function of current expansion, which achieves the purpose of reducing chip cost without affecting the photoelectric performance of secondary light.
[0085]In the light-emitting diode P-type doped layer growth method provided in this embodiment, the epitaxial wafer is fabricated into a chip size of 1000um*1000um, the driving current is 120MA, and the current spreading layer is designed to have a total thickness of 24nm (ALGaN and ALN) 3 layers of superlattice structure
[0086] The specific steps are:
[0087] Put the patterned sapphire substrate (Patterned Sapphire Substrate, referred to as: PSS) into the reaction chamber, at this stage, the flow ratio of nitrogen (N2): hydrogen (H2): ammonia (NH3) in the reaction chamber is (0:120:0 ) liter per minute (Standard Liter per Minute, SLM for short), the pressure of the reaction chamber is 200 Torr (Torr), and then the temperature of the reaction chamber is increased to 1080 ° C for 300 seconds, and the PSS is purified at high temperature.
[0088] The temperature in the reaction chamber was lowered to 540°C. At this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The ratio of flow rate is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and a low-temperature GaN core layer with a thickness of 35 nm is grown at this time.
[0089] The temperature in the reaction chamber was raised to 1050 °C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 500 Torr, and the undoped GaN structure layer with a thickness of 1000 nm is grown.
[0090] The temperature in the reaction chamber was kept at 1050 °C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the N-GaN layer with a thickness of 1000 nm is grown.
[0091] The temperature in the reaction chamber is controlled at 750-880°C, and the N in the reaction chamber is at this stage. 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, the quantum well is grown at 760 °C, and the quantum barrier is grown at 860 °C, a total of 13 pairs of quantum well light-emitting layers.
[0092] The temperature in the reaction chamber was lowered to 740°C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the low-temperature P-GaN layer is grown with a thickness of 20 nm.
[0093] The temperature in the reaction chamber was raised to 940 °C, and at this stage, the N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, and the P-ALGaN layer is grown with a thickness of 20 nm.
[0094] The temperature in the reaction chamber was stabilized at 950 °C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and the P-GaN layer is grown with a thickness of 40 nm.
[0095] The temperature in the reaction chamber was stabilized at 950 °C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (105:0:10) SLM, the pressure of the reaction chamber is controlled at 100 Torr, ALGaN with a thickness of 5 nm is grown first, and ALN with a thickness of 3 nm is grown last, and three cycles of (ALGaN and ALN) superlattice structure layers are alternately grown. Mg doping was performed at the same time as the growth, and the Mg doping concentration was 1.9×1020cm-3.
[0096] The temperature in the reaction chamber was controlled at 720°C, and at this stage, N in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (72:0:40) SLM, the pressure of the reaction chamber is controlled at 200 Torr, and a P-InGaN layer is grown with a thickness of 3 nm.
[0097] The temperature in the reaction chamber was controlled at 710°C, and at this stage, the nitrogen in the reaction chamber was 2 :H 2 : NH 3 The flow ratio is (75:0:0) SLM, the pressure of the reaction chamber is controlled at 50 Torr, and the epitaxial wafer is annealed for 10 minutes to activate Mg.
[0098] Finally, using the chip technology to process, the photoelectric properties are the same as the effect of the chip with a current blocking layer, indicating that the superlattice layer of ALGaN and ALN plays the function of current expansion.
[0099] The method for growing a P-type doped layer of a light-emitting diode provided in this embodiment utilizes the superlattice of ALGaN and GaN as a function of current expansion, which achieves the purpose of reducing chip cost without affecting the photoelectric performance of secondary light.
[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features thereof can be equivalently replaced; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the embodiments of the present invention. scope.
