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Light-emitting diode P-type doped layer growth method

A technology of light-emitting diodes and doped layers, applied in electrical components, nanotechnology, circuits, etc., can solve the problems of poor photoelectric performance of LEDs, achieve the effect of improving photoelectric performance and reducing manufacturing costs

Active Publication Date: 2015-09-09
JIANGXI EPITOP OPTOELECTRONICS
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  • Abstract
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Problems solved by technology

[0005] An embodiment of the present invention provides a method for growing a P-type doped layer of a light-emitting diode, so as to overcome the problem of poor photoelectric performance of the LED caused by the removal of the SiO2 film in the prior art

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  • Light-emitting diode P-type doped layer growth method

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Embodiment Construction

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The technical solution of the present invention will be described in further detail below through specific embodiments and accompanying drawings.

[0028] An embodiment of the present invention provides a method for growing a P-type doped layer of a light emitting diode, and the method may specifically include:

[0029] growing a nucl...

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Abstract

The invention provides a light-emitting diode P-type doped layer growth method. The method comprises the steps of growing a nuclear layer on a substrate, forming an undoped structure layer on the nuclear layer, growing an N-type doped layer on the undoped structure layer, growing a quantum well light-emitting layer on the N-type doped layer, and growing a P-type doped layer on the quantum well light-emitting layer, wherein the P-type doped layer includes a superlattice structure of gallium nitride ALGaN and aluminum nitride ALN. As the P-type doped layer includes a superlattice structure of ALGaN and ALN, current can be effectively prevented from entering an epitaxial quantum well layer, and the optoelectronic performance of LEDs is improved effectively. Furthermore, the manufacturing cost can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a P-type doped layer of a light emitting diode. Background technique [0002] In a light emitting diode (Light Emitting Diode, referred to as LED), when the current cannot be effectively expanded by the indium antimony oxide ITO current expansion layer, but directly enters the epitaxial quantum well light-emitting layer, it will cause current congestion and cause excessive local current Reduce the brightness of the diode, increase the voltage and other effects. [0003] In order to solve the above problems, a layer of silicon dioxide SiO2 will be grown on the lower end of the growth electrode on the epitaxial wafer surface by using plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, referred to as: PECVD) technology during the LED manufacturing process. 2 The thin film can effectively prevent the current from directly...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/02B82Y40/00
CPCB82Y40/00H01L21/0254H01L21/0259H01L33/0075
Inventor 焦建军黄小辉周德保康建梁旭东
Owner JIANGXI EPITOP OPTOELECTRONICS
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