A kind of LiGBT device and manufacturing method with raised anode
A manufacturing method and anode technology, applied in the field of electronics, can solve problems such as larger overall device size, affecting device stability, and longer turn-off time, so as to reduce turn-off time, improve performance and stability, and reduce lateral effect of size
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[0023] Specific embodiments of the present invention will be further described in detail below.
[0024] as attached Figure 4 As shown, the LIGBT device based on the combination of dielectric isolation and junction isolation has a buried oxide layer 2 on a silicon substrate 1; a drift region 3 is located on the buried oxide layer; one side of the drift region is a cathode region, and the other side is an anode region; In the P body region 4, there are cathode heavily doped P+ region 5 and cathode heavily doped N+ region 6 in sequence; the anode P+ region 8 is lightly doped N buffer zone 7, and the anode heavily doped N+ region 11 is raised, and the raised part The height of 10 is d, and the anode P+ region 8 and N+ region 11 are separated by silicon dioxide medium 9; the upper part of the device is sequentially composed of cathode 12, gate 13, anode 15, and anode 16; the cathode is heavily doped N+ region 6, drift Between the regions 3, the upper end of the P body region 4 i...
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