A kind of LiGBT device and manufacturing method with raised anode

A manufacturing method and anode technology, applied in the field of electronics, can solve problems such as larger overall device size, affecting device stability, and longer turn-off time, so as to reduce turn-off time, improve performance and stability, and reduce lateral effect of size

Active Publication Date: 2017-12-05
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The difference from LDMOS is that LIGBT is a bipolar device. When it is turned on, there is not only electron current, but the anode P+ will inject holes into the drift region to generate electron current, which makes the turn-off time longer.
Generally, the anode short-circuit structure that reduces the turn-off time can provide an electron extraction channel when the device is turned off, but there is a process of transition from LDMOS mode to LIGBT mode when the device is turned on, which brings negative resistance effect and affects the stability of the device.
Dielectrically isolated LIGBT can suppress the negative resistance effect, but because of the depth and width of the dielectric trench, the size of the device will become larger
The separated structure of the anode P+ and N+ can also suppress the negative resistance effect, but also the overall size of the device becomes larger due to the distance between the two

Method used

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  • A kind of LiGBT device and manufacturing method with raised anode
  • A kind of LiGBT device and manufacturing method with raised anode
  • A kind of LiGBT device and manufacturing method with raised anode

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Embodiment Construction

[0023] Specific embodiments of the present invention will be further described in detail below.

[0024] as attached Figure 4 As shown, the LIGBT device based on the combination of dielectric isolation and junction isolation has a buried oxide layer 2 on a silicon substrate 1; a drift region 3 is located on the buried oxide layer; one side of the drift region is a cathode region, and the other side is an anode region; In the P body region 4, there are cathode heavily doped P+ region 5 and cathode heavily doped N+ region 6 in sequence; the anode P+ region 8 is lightly doped N buffer zone 7, and the anode heavily doped N+ region 11 is raised, and the raised part The height of 10 is d, and the anode P+ region 8 and N+ region 11 are separated by silicon dioxide medium 9; the upper part of the device is sequentially composed of cathode 12, gate 13, anode 15, and anode 16; the cathode is heavily doped N+ region 6, drift Between the regions 3, the upper end of the P body region 4 i...

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Abstract

The invention relates to a LIGBT device with raised anode and a manufacturing method thereof, belonging to the field of electronic technology. The LIGBT device raises the N+ of the anode region of the conventional short-circuit LIGBT, and isolates the anode N+ and the anode P+ with a medium. On the one hand, this new anode N+ raised structure can eliminate the negative resistance effect of the device when it is turned on, and improve the performance and stability of the device; on the other hand, it can also Reduce the lateral dimension area of ​​the device.

Description

technical field [0001] The invention relates to a LIGBT device with raised anode and a manufacturing method thereof, belonging to the field of electronic technology. Background technique [0002] Lateral Insulator Gate Bipolar Transistor LIGBT (Lateral Insulator Gate Bipolar Transistor) is a composite power device combined with a MOS gate device structure and a bipolar transistor structure. It has the characteristics of high input impedance and low conduction voltage drop. The difference from LDMOS is that LIGBT is a bipolar device. When it is turned on, there is not only electron current, but the anode P+ will inject holes into the drift region to generate electron current, which makes the turn-off time longer. Generally, the anode short-circuit structure that reduces the turn-off time can provide an electron extraction channel when the device is turned off, but there is a process of transition from LDMOS mode to LIGBT mode when the device is turned on, which brings negativ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/08H01L29/739H01L21/331
CPCH01L29/0834H01L29/66325H01L29/7394
Inventor 成建兵刘雪松俞露露陈旭东郭厚东滕国兵
Owner NANJING UNIV OF POSTS & TELECOMM
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