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Platinum doping method in fast-recovery diode preparing technologies and fast-recovery diode

A recovery diode and preparation process technology, applied in the field of fast recovery diodes, can solve problems such as hindering platinum, affecting platinum activation, and large platinum consumption, achieving excellent forward voltage drop, reducing stress, and preventing pollution.

Active Publication Date: 2015-10-14
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the fast recovery diode, the amount of platinum used as the recombination center is very small, and the consumption of platinum caused by platinum sputtering or platinum evaporation is too large, and too much platinum is on the surface of the silicon wafer, which causes waste and increases the production cost; and platinum Evaporation or platinum sputtering is physically deposited on the surface of the silicon wafer, causing stress, bringing excessive tension, affecting the activation of platinum, preventing platinum from becoming an effective recombination center, resulting in poor performance of fast recovery diodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0054] (1) Soak the silicon wafer in a platinum-doped soaking solution at 5°C for 2000s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 0.01 g of platinum per liter of deionized water Ammonium chloroplatinite, add 1000mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0055] (2) Rinse the silicon wafer obtained in step (1) at 10°C for 200 min with a mixed solution of sulfuric acid and hydrogen peroxide; then wash with hydrofluoric acid solution;

[0056] The mixed solution of sulfuric acid and hydrogen peroxide comprises the following components according to volume percentage: 30% sulfuric acid; 10% hydrogen peroxide; the remainder of deionized water; the concentration of the sulfuric acid is 30v%, and the concentration of hydrogen peroxide is 35...

Embodiment 2

[0059] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0060] (1) Soak the silicon wafer in a platinum-doped soaking solution at 50°C for 0.1s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 10 g of platinum per liter of deionized water For ammonium chloroplatinite, add 0.1 mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0061] (2) Rinse the silicon wafer obtained in step (1) at 100°C for at least 1 min with a mixed solution of sulfuric acid and hydrogen peroxide; then wash with hydrofluoric acid solution;

[0062] The mixed solution of sulfuric acid and hydrogen peroxide comprises the following components according to volume percentage: 10% sulfuric acid; 30% hydrogen peroxide; the remainder of deionized water; the concentration of the sulfuric acid is 30v%, and the concentration of hydrogen pero...

Embodiment 3

[0065] A platinum doping method in a fast recovery diode preparation process, said method comprising the steps of:

[0066] (1) Soak the silicon wafer in a platinum-doped soaking solution for 1000s at 30°C to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 5g of chlorine per liter of deionized water For ammonium platinite, add 500mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of said hydrofluoric acid is 30v%);

[0067] (2) Rinse the silicon wafer obtained in step (1) at 80°C for 50 minutes with a mixed solution of sulfuric acid and hydrogen peroxide; then wash it with hydrofluoric acid solution;

[0068] The mixed solution of the sulfuric acid and hydrogen peroxide comprises the following components according to volume percentage: 20% of sulfuric acid; 20% of hydrogen peroxide; the remainder of deionized water; the concentration of the sulfuric acid is 30v%, and the concentration of hydrogen per...

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PUM

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Abstract

The invention relates to a platinum doping method in fast-recovery diode preparing technologies. The method comprises the following steps of (1) immersing a silicon chip inside a platinum doping solution to acquire a silicon chip with platinum ions absorbed; (2) cleaning the silicon chip acquired in the step (1); (3) and annealing to acquire a platinum-doped silicon material. In the cleaning step (2), a mixed solution of sulfuric acid and hydrogen peroxide is first adopted for cleaning and then a hydrofluoric acid solution is adopted for cleaning. The method provided in the invention overcomes the technical prejudice of adopting evaporation or sputtering methods for platinum doping in the prior art and adopts solutions to perform platinum doping on the silicon chip material in an innovative way. A new idea for the platinum doping method in fast-recovery diode preparing technologies is provided.

Description

technical field [0001] The invention belongs to the field of diode preparation, and in particular relates to a platinum doping method in a fast recovery diode preparation process and the prepared fast recovery diode. Background technique [0002] Fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters as a high-frequency rectifier Diodes, freewheeling diodes or damping diodes are used. [0003] Among fast recovery diodes, silicon fast recovery diodes are widely used. In order to increase the switching speed, reduce the reverse recovery time T rr , the traditional method is to use heavy metal doping (such as gold doping, platinum doping) and electron radiation to introduce recombination centers into the diode in a large area or even as a whole to eliminate excess carriers in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/22H01L21/02H01L29/861
Inventor 王学良陈宏
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS