Yellow LED material on Si substrate and manufacturing method thereof
A LED structure and substrate technology, applied in the field of microelectronics, can solve the problems of complex InGaN quantum well growth process, degraded GaN crystal quality, and degraded device performance, so as to avoid large lattice mismatch of materials, improve quality, and reduce production cost effect
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Embodiment 1
[0025] Embodiment 1, making the C doping concentration is 1×10 18 cm -3 , Si doping concentration is 3×10 18 cm -3 n-type GaN active layer LED material.
[0026] Step 1, performing heat treatment on the substrate substrate.
[0027] Put the Si substrate in the metal organic compound chemical vapor deposition MOCVD reaction chamber, and pass the mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the conditions that the substrate heating temperature is 1000° C., the time is 7 minutes, and the pressure of the reaction chamber is 45 Torr, heat treatment is performed on the substrate.
[0028] Step 2, growing an AlN nucleation layer.
[0029] Lower the temperature of the heat-treated substrate to 600°C, feed the aluminum source with a flow rate of 5 μmol / min, hydrogen gas with a flow rate of 1200 sccm, and ammonia gas with a flow rate of 1200 sccm into the reaction chamber, and grow thickn...
Embodiment 2
[0034] Embodiment 2, making C doping concentration is 1×10 17 cm -3 , Si doping concentration is 5×10 17 cm -3 n-type GaN active layer LED material.
[0035] The implementation steps of this example are as follows:
[0036] In step A, the Si substrate is placed in a MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Under the conditions of Torr, the substrate heating temperature is 830° C., the time is 5 minutes, and the pressure of the reaction chamber is 30 Torr, the substrate substrate is heat treated.
[0037] Step B, reduce the temperature of the heat-treated substrate to 530°C, feed the aluminum source with a flow rate of 5 μmol / min, hydrogen gas with a flow rate of 1000 sccm and ammonia gas with a flow rate of 1000 sccm into the reaction chamber, and keep the pressure at 20 Torr A low-temperature AlN nucleation layer with a thickness of 10 nm was...
Embodiment 3
[0040] Embodiment 3, making C doping concentration is 1×10 19 cm -3 , Si doping concentration is 3×10 19 cm -3 n-type GaN active layer LED material.
[0041] The implementation steps of this example are as follows:
[0042] Step 1: performing heat treatment on the base substrate.
[0043] The Si substrate is placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and a mixed gas of hydrogen and ammonia is introduced into the reaction chamber for heat treatment. The process conditions are as follows:
[0044] The vacuum degree of the reaction chamber: less than 2×10 -2 Torr;
[0045] Substrate heating temperature: 1150°C;
[0046] Nitriding time: 10min;
[0047] Reaction chamber pressure: 700 Torr.
[0048] Step 2, growing an AlN nucleation layer.
[0049] A low-temperature AlN nucleation layer with a thickness of 200nm is grown on the heat-treated substrate, and the process conditions are as follows:
[0050] Reaction chamber temperature: 720°C...
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